Abstract: An RF receiver circuit configuration and design is limited by conditions and frequencies to simultaneously provide steady state low-noise signal amplification, frequency down-conversion, and image signal rejection. The RF receiver circuit may be implemented as one of a CMOS single chip device or as part of an integrated system of CMOS components.

Abstract: A radio frequency (RF) power amplifier (PA) for amplifying an RF signal between a source node and an output node, the RF PA including a silicon substrate with a complementary metal oxide semiconductor (CMOS) N-type transistor with a source region and a drain region fabricated therein. The source region includes the source node of the RF PA and the drain region includes the output node of the RF PA. The RF PA includes a planar resistor fabricated on the surface of the silicon substrate proximal to the drain region of the N-type transistor, wherein the resistor provides a thermal source for heating the RF PA; and a control circuit providing thermal heating to the RF PA by providing power to the planar resistor during RF signal bursts wherein the added thermal heating compensates transient heating within the transistor and results in a linear power amplification operation.

Abstract: An RF power limiter and ESD protection circuit has a set of two CMOS FETs each configured to perform a diode function with a defined forward voltage and arranged in an anti-parallel configuration and coupled between the input terminal and the ground terminal. When an RF signal is applied symmetrically to the input terminal and ground terminal it becomes symmetrically attenuated when the signal level exceeds the defined forward voltage of the diode configured CMOS FETs. In the ESD protection mode one of the CMOS FETs acts as a grounded gate NMOS transistor with SCR action to provide for mitigation of voltage and current over-stress of transistors utilized in RF transceiver circuits. Generally, the circuit architectures allow input power levels to be limited to an extent that reliable operation can be maintained.

Abstract: An RF receiver circuit configuration and design limited by conditions and frequencies to simultaneously provide steady state low-noise signal amplification, frequency down-conversion and image signal rejection. The invention provides combined circuits of an RF transceiver architecture that measure antenna reflected power relative to forward power using the error amplifier signal to adjust the gain of the variable gain amplifier in order to compensate for the mismatch between forward reflected power and forward power at the antenna in order to achieve constant radiated power. The RF receiver circuit may be implemented as one of a CMOS single chip device or as part of an integrated system of CMOS components.