Abstract: A method of removing impurities in a film is disclosed. The method includes generating hydrogen radicals including inputting a hydrogen radical precursor material to a radical source including a plasma chamber, that is external to a processing chamber, the radical source having an outlet in fluid communication with the processing chamber and creating a plasma in the plasma chamber. The hydrogen radicals are input into the processing chamber from the outlet of the radical source. The processing chamber has a pressure of between about 1 millitorr and about 10 torr and an impurity-containing film on a target is exposed to the hydrogen radicals. A system for reducing an oxide in an exposed surface is also disclosed.

Abstract: Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species is generated by creating free radicals, and combining the free radicals to form the chemical species at the point of use.