Abstract: The driver circuit contains a first line, which is to be connected to a first terminal of the Pockels cell (18; PC), and a second line, which is to be connected to a second terminal of the Pockels cell (18; PC), wherein the first line and/or the second line have/has an inductance (14, 15; 24, 25).
Type:
Grant
Filed:
November 23, 2015
Date of Patent:
July 11, 2017
Assignee:
BERGMANN MESSGERAETE ENTWICKLUNG KG
Inventors:
Thorald Horst Bergmann, Mathias Siebold, Markus Löser
Abstract: A high-voltage switch comprises one or more high-voltage transistors and a cooling substrate which may be manufactured from an electrically insulating material and on and/or through which a cooling medium can flow, wherein the one or more high-voltage transistors are mounted on at least one surface of the cooling substrate.
Abstract: A high-voltage switch comprises one or more high-voltage transistors and a cooling substrate which may be manufactured from an electrically insulating material and on and/or through which a cooling medium can flow, wherein the one or more high-voltage transistors are mounted on at least one surface of the cooling substrate.
Abstract: The present disclosure relates to a high voltage switch which may comprise a chain of MOS field-effect transistors (MOSFETs). The current of the individual MOSFETS, and hence the chain, can be controlled by means of adding a current measuring resistance into the source path of the transistors and transmitting the voltage arising there via a capacitor to a gate connector of the transistors.