Abstract: Method of manufacturing holding plate (11) including ceramic material of several chemical elements and configured for holding apparatus (10) for holding a component by electrostatic forces or vacuum, includes the steps of material removal from holding plate (11) by laser ablation, wherein by laser irradiation (1) protrusions (13) are formed on holding plate (11), end faces (13.1) of which span a carrier surface for the component, and surface modification of holding plate (11) by laser irradiation (1), wherein irradiation parameters of laser irradiation (1) are set such that at least one of the chemical elements of the ceramic material is enriched on the surface of holding plate (11). A method is also described of manufacturing holding apparatus (10) for holding a component by electrostatic forces or vacuum, holding plate (11) which is produced with the inventive method, and holding apparatus (10) with at least one holding plate (11).

Abstract: A method for processing a holding plate (10) of a clamping device (in particular clamp wafer chuck) for holding a component, in particular a wafer, wherein the holding plate (10) has a SiC-based surface (12) on which at least one protruding, SiC-based surface element (13) is formed, includes the steps of locally limited heating of the holding plate (10) in a predetermined surface section and creating the surface element (13) at the predetermined surface section by chemical vapor deposition, in particular by means of laser CVD. Applications of the method exist in repairing a holding plate (10) of a clamping device or manufacturing a holding plate (10) of a clamping device. Furthermore, a holding plate of a clamping device for holding a component, in particular a wafer, is described.

Abstract: Detection circuit for detecting electrical capacitance of electrode device in electrostatic holding device with clamp carrier, particularly for detecting component held by holding device, includes phase control circuit couplable to electrode device and has reference oscillator device, phase comparator and VCO circuit (VCOC). Phase comparator is arranged to generate a control voltage of VCOC as a function of reference signal from reference oscillator device and of VCO feedback signal from VCOC, at least one phase control circuit is configured for controlling VCOC as a function of capacitance to be detected, and for outputting an output signal characteristic of capacitance based on control voltage of VCOC, phase control circuit is configured for connection to electrode device such that VCOC contains capacitance to be detected as frequency-determining component, and reference oscillator device is configured for generating reference signal with adjustable reference frequency.

Abstract: An electrostatic holding device (100) for holding component (1) by electrostatic holding forces includes clamp carrier (10) which has electrode device (11) and is configured for receiving component (1), voltage source device (20) for provision of a source charge current for charging clamp carrier (10), source switching device (30) which is arranged for a switchable connection of voltage source device (20) with electrode device (11), and at least one charge storage device (40, 40A, 40B) which has storage capacitor (41, 41A, 41B) and is configured to receive a clamp discharge current and temporarily store electrical charges of clamp carrier (10) in storage capacitor (41, 41A, 41B) and provide a storage charge current for charging clamp carrier (10). Also described is a method for operating holding device (100) and transfer circuit (200) for transmitting charges from working capacitor (201) to storage capacitor (202).

Abstract: A carrier structure (100), particularly for optical components, includes a carrier body (10) which is formed from ceramic with hollows (11), and at least one cover layer (21, 22) which is formed from glass, arranged on at least one surface of the carrier body (10), and is connected to the carrier body (10) by means of at least one bond connection (23, 24) produced by means of anodic bonding. Methods for producing the carrier structure (100) and the use of the carrier structure as a mirror body, carrier for optical components and/or mechanical carrier for dynamically moved components are also described.

Abstract: Production of a holding apparatus (100) for electrostatically holding a component, e.g., silicon wafer (1), includes connecting plate-type first holding element (11, 12) and plate-type core element (13), first holding element (11, 12) having first electrode device (20) and spanning support surface for receiving component (1), and the connecting includes the steps: providing liquid adhesive to at least one of the mutually facing surfaces of first holding element (11, 12) and core element (13), aligning first holding element (11, 12) with first forming tool (40) such that support surface is matched to predetermined master surface (41) of first forming tool (40), and curing the adhesive, wherein first adhesive connecting layer (15) is formed, which has thickness variations constituted by form deviations between support surface and at least one of the mutually facing surfaces. Also described is a holding apparatus (100) configured to electrostatically hold a component, e.g., silicon wafer (1).

Abstract: A holding apparatus (100) for electrostatically holding a component (1), in particular a silicon wafer, includes at least one base body (10, 10A, 10B) which is composed of a first plate (11A) and a second plate (12), the first plate (11A) being arranged on an upper side (10A) of the base body (10, 10A, 10B) and the second plate are made of an electrically insulating material, a plurality of projecting, upper burls (13A) which are arranged on the upper side (10A) of the base body (10, 10A, 10B) and form a support surface for the component (1), and a first electrode which is arranged to receive a clamping voltage, wherein the first plate (11A) is made of an electrically conductive, silicon-including ceramic and forms the first electrode. A method for producing the holding apparatus (100) is also described.

Abstract: A holding apparatus (100) designed to electrostatically hold a component (1), e.g., a silicon wafer, includes a base body (10) produced from at least one plate (11, 12), a plurality of projecting burls (14) arranged on an upper side (13) of the base body (10) and form a support for component (1), and an electrode device (20) having a plurality of electrodes (21) arranged on the upper side (13) in gaps between burls (14), wherein the electrode device (20) comprises a silicon carrier disk (22) having a plurality of holes (23), and the carrier disk (22) is arranged on the upper side (13) in such a manner that the burls (14) project through the holes (23) and are spaced apart from the carrier disk (22), and wherein the electrodes (21) are arranged on disk portions between the holes (23). A method for producing the holding apparatus (100) is also described.

Abstract: Holding apparatus (100) for electrostatically holding component (1), (e.g., a silicon wafer), includes base body (10) composed of first and second plates (11A,12), the first plate being arranged on upper side (10A) of base body (10) and second plate (12) carrying first plate (11A), and second plate (12) being an electrically insulating material, a plurality of projecting, upper burls (13A) arranged on upper side (10A) and forming a support surface for component (1), and first electrode device (20A) having first electrodes (21A) arranged on upper side (10A) for receiving a clamping voltage, wherein first plate (11A) is produced from electrically conductive, Si-based ceramic and carries upper plate insulating layer (14A) which covers upper side (10A), having upper burls (13A), and the first electrodes (21A) include electrode layers arranged on upper burls (13A) and each carry upper electrode insulating layer (15A). A method for producing the holding apparatus is also described.

Abstract: In a method for solid body joining of a carrier body (10) and a cover layer (20), in particular by anodic bonding, the cover layer (20) is pressed with a pressing force against a curved carrier body surface (11), wherein the pressing force during the solid body joining is distributed by way of a pressure intermediary device (30) areally and simultaneously over the whole cover layer (20) and is directed perpendicularly to the curvature of the carrier body surface (11). A composite component comprising a carrier body (10) and a cover layer (20) is also disclosed, wherein a curved areal joining region (13) is formed between a cover layer surface (21) and a carrier body surface (11).

Abstract: Method for measuring shape of wavefront of optical radiation field generated by radiation source, includes: (a) setting diaphragm positions in pinhole diaphragm having diaphragm opening movable transversely to radiation source's optical axis, wherein a partial beam from radiation field passes through diaphragm opening at each diaphragm position and is imaged on optical sensor by imaging optics device; (b) recording lateral positions of partial beam relative to optical axis of imaging optics device, wherein lateral positions each with one of the diaphragm positions of pinhole diaphragm are recorded by optical sensor, and determining the shape of wavefront from recorded lateral positions of partial beam, wherein beam incidence range of the partial beam which is invariable for all diaphragm positions is set on imaging optics device with a pentaprism arrangement including at least first pentaprism and positioned between pinhole diaphragm and imaging optics device.

Abstract: A method for processing a metal film (1) embedded in a carrier (2) includes the step of heating the metal film (1) in such a way that the metal film (1) is transformed in a subregion into at least one insulator section (3). The metal film (1) is preferably locally heated by laser radiation (4). Also described is a component (10, 11, 12, 13) which is produced by the method and includes an electrostatic clamp, a drive mechanism which is adapted for moving a workpiece under the action of electrical fields, a resistor element or a display device, for example.

Abstract: A triangulation camera device includes a light source device being adapted for generating illumination light to be directed onto an object under investigation and including a light source with an optical pattern generator and a first aperture being arranged along a first optical axis, a detector device being adapted for sensing reflection light reflected by the object and including a detector camera and a second aperture being arranged along a second optical axis, and an imaging optic having imaging lenses being adapted for imaging the illumination light onto the object and for collecting the reflection light, said imaging optic having a third optical axis, wherein the first, second and third optical axes are arranged in parallel and displaced relative to each other and the first and second apertures are arranged with a telecentric configuration relative to the imaging optic such that the illumination light and the reflection light are capable of forming a parallel illumination light bundle and a parallel ref

Abstract: A method for processing a metal film (1) embedded in a carrier (2) includes the step of heating the metal film (1) in such a way that the metal film (1) is transformed in a subregion into at least one insulator section (3). The metal film (1) is preferably locally heated by laser radiation (4). Also described is a component (10, 11, 12, 13) which is produced by the method and includes an electrostatic clamp, a drive mechanism which is adapted for moving a workpiece under the action of electrical fields, a resistor element or a display device, for example.

Abstract: A triangulation camera device includes a light source device being adapted for generating illumination light to be directed onto an object under investigation and including a light source with an optical pattern generator and a first aperture being arranged along a first optical axis, a detector device being adapted for sensing reflection light reflected by the object and including a detector camera and a second aperture being arranged along a second optical axis, and an imaging optic having imaging lenses being adapted for imaging the illumination light onto the object and for collecting the reflection light, said imaging optic having a third optical axis, wherein the first, second and third optical axes are arranged in parallel and displaced relative to each other and the first and second apertures are arranged with a telecentric configuration relative to the imaging optic such that the illumination light and the reflection light are capable of forming a parallel illumination light bundle and a parallel ref

Abstract: A carrier structure (100), particularly for optical components, includes a carrier body (10) which is formed from ceramic with hollows (11), and at least one cover layer (21, 22) which is formed from glass, arranged on at least one surface of the carrier body (10), and is connected to the carrier body (10) by means of at least one bond connection (23, 24) produced by means of anodic bonding. Methods for producing the carrier structure (100) and the use of the carrier structure as a mirror body, carrier for optical components and/or mechanical carrier for dynamically moved components are also described.