Abstract: An assembly comprises a pince-nez molded in one piece and comprises a substantially planar structure which has a first rim provided with a first lens and a second rim provided with a second lens, the structure having a plane which passes through the first and second rims and the first and second lenses, the first and second rims each being extended by a linkage which connects them together; a holding element intended to be secured to the pince-nez is in contact with the linkage and comprises at least two portions, the holding element secured to the linkage being elastically deformable between a storage position whereby the portions are separated from each other, and a tensioned position whereby the portions are constrained closer together; and a case intended to contain the pince-nez for the storage of the pince-nez.

Abstract: An assembly comprises a pince-nez moulded in one piece and comprises a substantially planar structure which has a first rim provided with a first lens and a second rim provided with a second lens, the structure having a plane which passes through the first and second rims and the first and second lenses, the first and second rims each being extended by a linkage which connects them together; a holding element intended to be secured to the pince-nez is in contact with the linkage and comprises at least two portions, the holding element secured to the linkage being elastically deformable between a storage position whereby the portions are separated from each other, and a tensioned position whereby the portions are constrained closer together; and a case intended to contain the pince-nez for the storage of the pince-nez.

Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.

Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

Abstract: A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity section. Corresponding first ends of the straight cavity sections are interconnected at a first light-emitting facet, and second ends of the straight sections are interconnected by the curved waveguide. Additional curved and straight sections can be linked to provide various ring configurations.

Abstract: A semiconductor ring-type optical device having an optical cavity with at least one partially transmitting facet which serves as an emergence region for light propagating within the optical cavity has the upper surface of the cavity coated with a conductive layer which is divided into at least two segments so as to provide two separate electrodes to allow application of separate voltages to the two segments. When different voltages are applied, one segment of the laser will carry a lower current density than the other, resulting in a lower gain under the electrode having the lower voltage and causing the generated laser wavelength to experience a shift to shorter wavelengths. Accordingly, variations in the voltage applied to the two electrodes allows tuning of the laser output wavelength.