Patents Assigned to BINOPTICS
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Patent number: 7606277Abstract: A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.Type: GrantFiled: December 26, 2006Date of Patent: October 20, 2009Assignee: Binoptics CorporationInventors: Alex A. Behfar, Cristian B. Stagarescu, Alfred T. Schremer
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Patent number: 7598527Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.Type: GrantFiled: January 5, 2006Date of Patent: October 6, 2009Assignee: Binoptics CorporationInventors: Alex A. Behfar, Cristian B. Stagarescu, Malcolm R. Green, Alfred T. Schremer, Jr.
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Patent number: 7569860Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.Type: GrantFiled: January 19, 2005Date of Patent: August 4, 2009Assignee: BinOptics CorporationInventors: Alex A. Behfar, Malcolm Green, Alfred T. Schremer
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Patent number: 7542497Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.Type: GrantFiled: July 18, 2007Date of Patent: June 2, 2009Assignee: Binoptics CorporationInventor: Alex A. Behfar
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Patent number: 7408183Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively.Type: GrantFiled: August 24, 2006Date of Patent: August 5, 2008Assignee: Binoptics CorporationInventors: Alex A. Behfar, Wilfried Lenth
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Publication number: 20080151955Abstract: A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.Type: ApplicationFiled: December 26, 2006Publication date: June 26, 2008Applicant: BinOptics CorporationInventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu
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Publication number: 20080019408Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.Type: ApplicationFiled: July 18, 2007Publication date: January 24, 2008Applicant: BinOptics CorporationInventor: Alex A. Behfar
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Patent number: 7245645Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a near 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser comprises a divergence-compensating lens on the surface above the near 45°-angled facet.Type: GrantFiled: October 14, 2004Date of Patent: July 17, 2007Assignee: BinOptics CorporationInventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu
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Publication number: 20070045637Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively.Type: ApplicationFiled: August 24, 2006Publication date: March 1, 2007Applicant: BinOptics CorporationInventors: Alex Behfar, Wilfried Lenth
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Publication number: 20060291514Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.Type: ApplicationFiled: June 20, 2006Publication date: December 28, 2006Applicant: BinOptics CorporationInventors: Alex Behfar, Alfred Schremer, Cristian Stagarescu, Vainateya
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Publication number: 20060274804Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.Type: ApplicationFiled: June 1, 2006Publication date: December 7, 2006Applicant: BinOptics CorporationInventors: Alex Behfar, Alfred Schremer
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Publication number: 20060270077Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.Type: ApplicationFiled: August 2, 2006Publication date: November 30, 2006Applicant: BinOptics CorporationInventors: Alex Behfar, Malcolm Green, Alfred Schremer
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Publication number: 20060118893Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.Type: ApplicationFiled: January 5, 2006Publication date: June 8, 2006Applicant: BinOptics CorporationInventors: Alex Behfar, Cristian Stagarescu, Malcolm Green, Alfred Schremer
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Patent number: 7042630Abstract: A ring cavity laser has at least two facets and a mechanism is provided to produce unidirectional propagation and light emission at a first wavelength. A source of laser light at a second wavelength is injected into the cavity to reverse the direction of propagation and to produce emission at the second wavelength.Type: GrantFiled: July 16, 2003Date of Patent: May 9, 2006Assignee: Binoptics Corp.Inventor: Alex A. Behfar
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Patent number: 7012291Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.Type: GrantFiled: July 17, 2003Date of Patent: March 14, 2006Assignee: BinOptics CorporationInventors: Alex Behfar, Alfred T. Schremer, Cristian B. Stagarescu
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Publication number: 20050232326Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.Type: ApplicationFiled: April 14, 2005Publication date: October 20, 2005Applicant: BinOptics CorporationInventors: Alex Behfar, Malcolm Green, Alfred Schremer
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Publication number: 20050147145Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.Type: ApplicationFiled: August 31, 2004Publication date: July 7, 2005Applicant: BinOptics CorporationInventors: Alex Behfar, Kiyofumi Muro, Cristian Stagarescu, Alfred Schremer
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Publication number: 20050123016Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a near 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser comprises a divergence-compensating lens on the surface above the near 45°-angled facet.Type: ApplicationFiled: October 14, 2004Publication date: June 9, 2005Applicant: BinOptics CorporationInventors: Alex Behfar, Alfred Schremer, Cristian Stagarescu
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Publication number: 20050083982Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring.Type: ApplicationFiled: October 5, 2004Publication date: April 21, 2005Applicant: BinOptics CorporationInventor: Alex Behfar
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Patent number: 6790689Abstract: A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity section. Corresponding first ends of the straight cavity sections are interconnected at a first light-emitting facet, and second ends of the straight sections are interconnected by the curved waveguide. Additional curved and straight sections can be linked to provide various ring configurations.Type: GrantFiled: December 23, 2002Date of Patent: September 14, 2004Assignee: BinOptics CorporationInventor: Alex Behfar