Patents Assigned to Bio-X Inc.
  • FET type sensor, ion density detecting method comprising this sensor, and base sequence detecting method
    Patent number: 7049645
    Abstract: The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.
    Type: Grant
    Filed: November 11, 2002
    Date of Patent: May 23, 2006
    Assignee: Bio-X Inc.
    Inventors: Kazuaki Sawada, Masakatsu Uchiyama