Abstract: A new approach is proposed for sequencing by hybridization (SBH), which uses interaction to dramatically reduce the number of oligonucleotides used for de novo sequencing of large DNA fragments, while preserving the parallelism which is the primary advantage of SBH. In particular, a series of rounds is performed, starting from an initial fixed oligonucleotide array, of hybridizing a target sample against an array, and then designing a new oligonucleotide array in response to the results of the rounds to date, until the sequence is determined.

Abstract: An optical waveguide device comprising an optical waveguide for guiding an optical wave therethrough and a grating coupler, which is located on a surface of or in the vicinity of the optical waveguide and which couples the guided optical wave traveling in the optical waveguide with an external optical wave. The grating coupler is provided with a row of teeth spaced apart by a gap and positioned periodically or quasi-periodically with a pitch along the optical axis. The teeth have front and rear sidewalls, width and height, front and rear blaze angles less than 90.degree., and preferably have a parallelogramic profile. The width to period ratio of the grating teeth can be variable along the guided wave propagation direction so that the radiated beam can be shaped to a designed profile. The guided wave is radiated very efficiently with a predetermined profile out of the optical waveguide; or an external optical wave, which takes a known form, is introduced very efficiently into the optical waveguide.

Abstract: A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.

Abstract: The present invention relates to a separate confinement heterostructure laser, and in particular to a stripe geometry, ridge waveguide geometry, having an active layer positioned between a pair of n-type and p-type emitter layers which inject charge carriers under the ridge guide into the active layer. A pair of ohmic contacts are used to inject one type of charge carrier into at least one emitter layer outside the ridge area. When a signal is applied to the pumping contacts (p- and n-type) in forward bias and an intermittent electric field is applied to the ohmic side contacts, the flow of current injected by the side contacts controls the densities of carriers injected by the pumping contacts, thereby controlling spatially and temporally the optical gain and optical confinement factor.

Abstract: The output electromagnetic power of optoelectric heterojunction semiconductor devices having an active semiconductor layer with a mobile charge carrier plasma is controlled by applying a microwave electric field inside the active layer by means of at least two semiconductor contacts to the active layer that are conducting to at least one type of mobile charge carrier and blocking to another type of charge carrier. An electrical signal is applied inside the active layer to transform the distribution of energies and equivalent temperature of the charge carriers of the mobile charge carriers in order to control light emission and absorption in the active layer. A modulator is disclosed with two such semiconductor contacts on the active layer in which charge carriers are optically generated. A monolithically integrated, cavity-coupled laser and modulator is disclosed in which the laser and modulator are fabricated on a common substrate and the laser is a distributed feedback laser (DFB).

Abstract: The output electromagnetic power of optoelectric heterojunction semiconductor devices having an active semiconductor layer with a mobile charge-carrier plasma is controlled by applying a microwave electric field inside the active layer by means of at least two semiconductor contacts to the active layer that are conducting to at least one type of mobile charge carrier and blocking to another type of charge carrier. An electrical signal is applied inside the active layer to transform the distribution of energies and equivalent temperature of the charge carriers of the mobile charge-carrier plasma in order to control light emission and absorption in the active layer. A heterojunction semiconductor laser is disclosed with two sets of electrical contacts: one to apply pumping currents and the other to control the electric field.

Abstract: A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.