Abstract: A technique to mitigate timing errors induced by power supply droops includes an inverter-based droop detector as well as Dual Mode Logic (DML) to achieve a droop-resist ant timing response. The droop detector is based on capacitor ratios and is thus less sensitive to Process/Voltage/Temperature (PVT) and to random offset than the prior art. The DML can alter its power/performance ratio based on the droop level input it receives from the detector, such that the critical timings are preserved.

Abstract: A method for minimizing the skew (balancing) between all paths arriving at the inputs ports of each gate within a given combinatorial circuit.

Abstract: A process monitor circuitry is described that can measure the electron mobility (?), oxide capacitance (Cox) and threshold voltage (Vth) of an integrated circuit.

Abstract: A sensor circuit includes a bandgap reference circuit (BGREF) that produces two outputs, a temperature dependent output and a reference voltage, which does not change with temperature. The temperature dependent output includes a PTAT (proportional to absolute temperature, rising with increased temperature) portion and a CTAT (complementary to absolute temperature, falling with increased temperature) portion. Circuitry is provided that calculates the reference voltage by adding the PTAT portion and a divided version of the CTAT portion in which the CTAT portion has been divided by a divisor.

Abstract: A thermal sensor includes a first resistor and a first capacitor. The first resistor is a thermistor. A first current source is coupled to the first resistor and the first capacitor. The first current source alternately charges the first resistor and the first capacitor each to a reference voltage, Vtherm. An output of the thermal sensor is a function of a resistance-capacitance (RC) time constant of the first resistor and the first capacitor.

Abstract: A method for detecting unreliable bits in transistor circuitry includes adjusting a value of a variable capacitor coupled to a physical unclonable function (PUF) cell of a transistor circuit. The adjusting includes tilting the PUF cell to either a zero or one state: if the PUF cell changes its state during the tilting it is deemed unstable, and if the PUF cell does not change its state during the tilting it is deemed stable.

Abstract: A method uses data retention time (DRT) characteristics of a logic-compatible gain-cell embedded DRAM (dynamic random-access memory) (GC-eDRAM) array in a transistor circuit as a source for physical unclonable function (PUF) signature extraction of the circuit.

Abstract: A method of operating a first-in-first-out memory, called a FIFO, includes performing write and read operations of data with a FIFO. The FIFO has a size fifo_size and a maximum retention time. Once a datum is written to the FIFO, there is a limit of fifo_size-1 write operations before the datum becomes invalid and there is a limit of fifo_size-1 read operations before the datum is read, and the data is refreshed before reaching the maximum retention time. During the refreshing, the FIFO is available for further write and read operations.

Abstract: A physical unclonable function (PUF) array includes a plurality of PUF transistor cells each of which includes at least one inverter. An input and an output of the at least one inverter are shorted to a first reference node. There is adjustment circuitry for adjusting a reference voltage of the first reference node, and measurement circuitry for measuring a trip point of the at least one inverter. If the trip point is close to the reference voltage then bits of the at least one inverter are defined as unstable.

Abstract: A bandgap reference (BGREF) circuit includes at least one switch capacitor impedance element including a capacitor coupled with switches that receive a reference frequency. The at least one switch capacitor element is coupled with at least one diode. The BGREF circuit is operative to create a voltage reference.