Abstract: A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.

Abstract: A radio frequency (RF) power amplifier (PA) is reconfigured to operate in a low power mode from a high power mode. The RF PA has a first RF amplifier is connected to the first and second inputs of a first transformation network. The RF PA has a second a second RF amplifier connected to a second transformation network. During high power mode, both RF amplifiers drive a load coupled to the transformation networks. In low power mode the first RF amplifier is disabled and the first and second inputs of the first transformation are coupled together so as to change the load impedance seen by the second RF amplifier. The second RF amplifier continues to supply power to the load during operation in the low power mode.

Abstract: An RF power amplifier operates over the range of supply voltages provided by a DC/DC converter whether the range of voltages is intentional or unintentional. A system for digitally adjusting the bias levels relative to the supply voltage includes at least one RF power amplifier stage, a digital control block, and a bias circuit. The RF power amplifier stage has at least one RF input signal, at least one RF output signal, and at least one bias input that controls its bias conditions. The RF Power Amplifier Stage includes one or more active gain elements used to amplify the RF input signals. The RF power amplifier operates in a number of bias states controlled by the digital control block. The digital control block uses information related to the supply voltage and may use other information stored in memory to select the desired bias.

Abstract: A directional coupler utilizes an inductive element of a power amplifier and a coupled conductive element. The inductive element of the power amplifier is a functioning element within the power amplifier and at least part of the inductive element of the power amplifier is disposed in a multi-layer substrate. At least part of the coupled conductive element is disposed in the multi-layer substrate. The coupled conductive element is configured to be inductively coupled to the inductive element of the power amplifier such that the coupled conductive element carries a first RF signal that is representative of a second RF signal within the inductive element of the power amplifier.

Abstract: A radio frequency (RF) power amplifier (PA) is reconfigured to operate in a low power mode from a high power mode. The RF PA has a first RF amplifier is connected to the first and second inputs of a first transformation network. The RF PA has a second a second RF amplifier connected to a second transformation network. During high power mode, both RF amplifiers drive a load coupled to the transformation networks. In low power mode the first RF amplifier is disabled and the first and second inputs of the first transformation are coupled together so as to change the load impedance seen by the second RF amplifier. The second RF amplifier continues to supply power to the load during operation in the low power mode.

Abstract: A method and apparatus is provided for partitioning a radio using a multi-chip module to group some or all of the components of the radio in a single package. In one example, a radio uses a multi-chip module, including a chip carrier. Various components of the radio reside in integrated circuits that are mounted to the chip carrier. If desired, one or more antennas can be integrated into the chip carrier.

Abstract: A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.

Abstract: A method and apparatus are provided for use with a power amplifier for protecting active devices on the power amplifier. A peak detector is used by control circuitry to detect the presence of a peak voltage that exceeds a threshold voltage. In response to the detection of a peak voltage, the gain of the power amplifier is reduced.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals. Differential RF power amplifiers are also provided with inductive networks coupled at various nodes of the power amplifiers.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.

Abstract: Real power delivered to a load in an RF transmit path is measured. Measuring the real power includes supplying a first voltage from a first side of a passive network disposed between the power amplifier and the load, supplying a second voltage from a second side of the passive network; and using the first and second voltages and a phase delayed voltage to determine the real power delivered to the load. A voltage difference between the first and second voltages is determined and multiplied by the phase shifted voltage. A low pass filter is then applied to the output of the multiplier to provide an indication of the real power consumed by the load. The indication of real power consumed may then be used to control the power amplifier.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.

Abstract: An adaptively tuned RF power amplifier includes at least one power amplifier stage that has one or more active elements. A tunable output network is coupled to the power amplifier stage and includes one or more adjustable reactive elements. A mismatch detector detects a tuning mismatch based, at least in part, on one or more signals present within the tunable output network, and supplies one or more mismatch signals indicative of a detected tuning mismatch. A tuning controller, responsive to the one or more mismatch signals, controls one or more of the one or more adjustable reactive elements in the tunable output network so as to control the detected mismatch.

Abstract: A method and apparatus is provided for partitioning a radio using a multi-chip module to group some or all of the components of the radio in a single package. In one example, a radio uses a multi-chip module, including a chip carrier. Various components of the radio reside in integrated circuits that are mounted to the chip carrier. If desired, one or more antennas can be integrated into the chip carrier.

Abstract: A method and apparatus is provided for detecting the output power of a power amplifier. The output power is detected by detecting the absolute values of the voltage and current at the output of the amplifier and mixing the detected voltage and current to generate a signal related to the output power.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals. Differential RF power amplifiers are also provided with inductive networks coupled at various nodes of the power amplifiers. In some examples, techniques are used to stabilize differential power amplifiers by stabilizing common-mode feedback loops.

Abstract: A method and apparatus if provided for shielding a capacitor structure formed in a semiconductor device. In a capacitor formed in an integrated circuit, one or more shields are disposed around layers of conductive strips to shield the capacitor. The shields confine the electric fields between the limits of the shields.

Abstract: In a power amplifier, techniques are provided for protecting the power amplifier from temperature extremes resulting from conditions such as load mismatches. After sensing the temperature of the power amplifier, the operation of the RF power amplifier is controlled accordingly. In one example, the power amplifier is shut down when the sensed temperature reaches a threshold value, which can be set to a value just below the point where permanent damage would occur. In another example, when a threshold temperature is reached, the operation of the power amplifier is changed, to prevent the temperature of the power amplifier from rising to a level that would damage the power amplifier.

Abstract: In a power amplifier, techniques are provided for protecting the power amplifier from temperature extremes resulting from conditions such as load mismatches. After sensing the temperature of the power amplifier, the operation of the RF power amplifier is controlled accordingly. In one example, the power amplifier is shut down when the sensed temperature reaches a threshold value, which can be set to a value just below the point where permanent damage would occur. In another example, when a threshold temperature is reached, the operation of the power amplifier is changed, to prevent the temperature of the power amplifier from rising to a level that would damage the power amplifier.