Abstract: Methods and apparatus for a gate-length biasing methodology for optimizing integrated digital circuits are described. The gate-length biasing methodology replaces a nominal gate-length of a transistor with a biased gate-length, where the biased gate-length includes a bias length that is small compared to the nominal gate-length. In an exemplary embodiment, the bias length is less than 10% of the nominal gate-length.

Abstract: A method and system for representing metal wires in Very Large Scale Integration (VLSI) circuit design in a simplified form. A pair of metal wires is considered at a time. A plurality of Piece Wise Linear (PWL) equations is created to represent sides each of the pair of metal wires. The plurality of PWL equations is used to determine an equivalent coupling capacitance of the pair of metal wires. The pair of metal wires is reshaped to form a pair of reshaped metal wires that are electrically equivalent.

Abstract: The present invention provides a method and a system for designing an integrated circuit comprising a plurality of elements. The method includes obtaining a lithography-simulated layout corresponding to at least one element. The lithography-simulated layout accounts for lithography effects on the element. The method further includes determination of an equivalent circuit representation that is compatible to a circuit analysis tool, corresponding to the lithography-simulated layout with respect to one or more performance characteristics and based on user preferences. The method also provides equivalent circuit representation to the circuit analysis tool that analyzes one or more performance characteristics of the elements.