Abstract: The present invention describes use of electron beam evaporation method for fabrication of group III-nitride thin films. The fabricated thin films found to have desirable crystalline and optical properties. These films and their properties could be used for protecting electronic devices under space radiation applications such as solar cell operating in space.
Type:
Grant
Filed:
July 16, 2007
Date of Patent:
February 24, 2009
Assignee:
Blue Wave Semicodnuctors, Inc.
Inventors:
Ratnakar D. Vispute, Evan Bertrue Jones