Abstract: A magnetic memory includes a deformable base plate, a spin device element coupled with the deformable base plate and storing a data as a magnetization direction, and a bending mechanism to bend the deformable base plate. At least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance.

Abstract: A magnetic memory includes a plurality of memory cells and a data identification circuit. Each of the memory cells includes: a first bias node to which a first voltage is applied in data reading, the first voltage being a positive voltage; a second bias node to which a second voltage is applied in the data reading, the second voltage being a negative voltage having substantially the same absolute value as the first voltage; a connection node; a first spin device element connected between the first bias node and the connection node; and a second spin device element connected between the connection node and the second bias node. The first and second spin device elements operate differentially. The data identification circuit identifies data stored in each of the memory cells based on a polarity of a voltage generated on the connection node.

Abstract: A magnetic memory includes a deformable base plate, a spin device element coupled with the deformable base plate and storing a data as a magnetization direction, and a bending mechanism to bend the deformable base plate. At least one of upper and lower surfaces of the deformable base plate faces a space which is not filled with solid substance.

Abstract: A magnetic memory includes a plurality of memory cells and a data identification circuit. Each of the memory cells includes: a first bias node to which a first voltage is applied in data reading, the first voltage being a positive voltage; a second bias node to which a second voltage is applied in the data reading, the second voltage being a negative voltage having substantially the same absolute value as the first voltage; a connection node; a first spin device element connected between the first bias node and the connection node; and a second spin device element connected between the connection node and the second bias node. The first and second spin device elements operate differentially. The data identification circuit identifies data stored in each of the memory cells based on a polarity of a voltage generated on the connection node.