Abstract: A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.
Type:
Grant
Filed:
April 26, 2022
Date of Patent:
December 26, 2023
Assignee:
BNNano, Inc.
Inventors:
Jason Edward Taylor, Mark Edmond, Steven Michael Wilcenski
Abstract: A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.
Type:
Application
Filed:
April 26, 2022
Publication date:
August 4, 2022
Applicant:
BNNano, Inc.
Inventors:
Jason Edward Taylor, Mark Edmond, Steven Michael Wilcenski
Abstract: A composition (or an aggregate) comprising an epitaxial h-BN/BNNT structure that comprises a hexagonal boron nitride structure that is epitaxial with respect to a boron nitride nanotube structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a composition (or an aggregate) in which not more than 1% of independent boron nitride nanotubes and boron nitride nanotube structures have a dixie cup or bamboo defect. Also, a composition in which at least 50% of independent boron nitride nanotubes and boron nitride nanotube structures are single-wall. Also, a method of making a composition that comprises epitaxial h-BN/BNNT structures.
Type:
Grant
Filed:
March 22, 2018
Date of Patent:
May 17, 2022
Assignee:
BNNano, Inc.
Inventors:
Jason Edward Taylor, Mark Edmond, Steven Michael Wilcenski
Abstract: A composition (or an aggregate) comprising an epitaxial h-BN/BNNT structure that comprises a hexagonal boron nitride structure that is epitaxial with respect to a boron nitride nanotube structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a composition (or an aggregate) in which not more than 1% of independent boron nitride nanotubes and boron nitride nanotube structures have a dixie cup or bamboo defect. Also, a composition in which at least 50% of independent boron nitride nanotubes and boron nitride nanotube structures are single-wall. Also, a method of making a composition that comprises epitaxial h-BN/BNNT structures.
Type:
Application
Filed:
March 22, 2018
Publication date:
September 26, 2019
Applicant:
BNNano, Inc.
Inventors:
Jason Edward Taylor, Mark Edmond, Steven Michael Wilcenski