Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: A device for separating and purifying useful quantities of particles comprises: (a) an anolyte reservoir connected to an anode, the anolyte reservoir containing an electrophoresis buffer; (b) a catholyte reservoir connected to a cathode, the catholyte reservoir also containing the electrophoresis buffer; (c) a power supply connected to the anode and to the cathode; (d) a column having a first end inserted into the anolyte reservoir, a second end inserted into the catholyte reservoir, and containing a separation medium; (e) a light source; (f) a first optical fiber having a first fiber end inserted into the separation medium, and having a second fiber end connected to the light source; (g) a photo detector; (h) a second optical fiber having a third fiber end inserted into the separation medium, and having a fourth fiber end connected to the photo detector; and (i) an ion-exchange membrane in the anolyte reservoir.

Abstract: A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity.

Abstract: A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.

Abstract: A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.

Abstract: A device for separating and purifying useful quantities of particles comprises: a. an anolyte reservoir connected to an anode, the anolyte reservoir containing an electrophoresis buffer; b. a catholyte reservoir connected to a cathode, the catholyte reservoir also containing the electrophoresis buffer; c. a power supply connected to the anode and to the cathode; d. a column having a first end inserted into the anolyte reservoir, a second end inserted into the catholyte reservoir, and containing a separation medium; e. a light source; f. a first optical fiber having a first fiber end inserted into the separation medium, and having a second fiber end connected to the light source; g. a photo detector; h. a second optical fiber having a third fiber end inserted into the separation medium, and having a fourth fiber end connected to the photo detector; and i. an ion-exchange membrane in the anolyte reservoir.

Abstract: A device for separating and purifying useful quantities of particles comprises: a. an anolyte reservoir connected to an anode, the anolyte reservoir containing an electrophoresis buffer; b. a catholyte reservoir connected to a cathode, the catholyte reservoir also containing the electrophoresis buffer; c. a power supply connected to the anode and to the cathode; d. a column having a first end inserted into the anolyte reservoir, a second end inserted into the catholyte reservoir, and containing a separation medium; e. a light source; f. a first optical fiber having a first fiber end inserted into the separation medium, and having a second fiber end connected to the light source; g. a photo detector; h. a second optical fiber having a third fiber end inserted into the separation medium, and having a fourth fiber end connected to the photo detector; and i. an ion-exchange membrane in the anolyte reservoir.

Abstract: A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.

Abstract: A thin film solid oxide fuel cell (TFSOFC) having a porous metallic anode and a porous cathode is provided. The fuel cell is formed by using a continuous metal foil as a substrate onto which is deposited a thin anode metal layer which is then patterned to reveal an array of pores in the anode. A dense thin film electrolyte is then deposited onto the porous anode layer overcoating the anode and filling the anode pores. The substrate foil layer is then removed to allow for exposure of the porous anode/electrolyte to fuel. The cathode is then formed on the electrolyte by depositing a cathode thin film cap using known film deposition techniques. Further processing may be used to increase the porosity of the electrodes. The metal foil may be treated to have an atomically ordered surface, which makes possible an atomically ordered anode and atomically ordered thin film electrolyte for improved performance.

Abstract: A method for identifying an individual includes the steps of collecting data from an individual's face using visible and infrared cameras, processing the acquired data, fitting a geometric model template of the face to the data according to a mathematical method, processing the fitted model to extract relevant first metadata, storing the first metadata in a machine readable format, and comparing second metadata to the first metadata, to determine their degree of similarity in order to identify the individual.

Abstract: A method of manufacturing a Fe-sheathed MgB2 wire includes the steps of: I. Selecting a carbon steel tube with 0.1% to 0.3% carbon; a. Crimping a first end of the tube; b. Selecting a Mg powder at least 99.8% pure, and sized for 325 mesh; c. Selecting a B powder, at least 99.99% pure, and sized for 325 mesh; d. Stoichiometrically mixing the Mg and B powders to form a mixture powder; e. Milling the mixture powder by using high-energy ball mill for 0.5 to 6 hours and using stainless steel mixing balls and vial, wherein the mass ratio of ball to powder is 20:1, to form a milled powder; f. Filling and packing the tube in an argon atmosphere with the milled powder to create a packing density of about 1.5 g/cm3; g. Crimping the second end of the tube to create a powder-filled tube; h. Rolling the powder-filled tube to create the Fe-sheathed MgB2 wire; and i. Annealing the as-rolled wire at 600 to 900° C. for 0.5 to 3 hours at high purity argon environment to create superconducting wire.

Abstract: A thin film solid oxide fuel cell (TFSOFC) having a porous metallic anode and a porous cathode is provided. The fuel cell is formed by using a continuous metal foil as a substrate onto which is deposited a thin anode metal layer which is then patterned to reveal an array of pores in the anode. A dense thin film electrolyte is then deposited onto the porous anode layer overcoating the anode and filling the anode pores. The substrate foil layer is then removed to allow for exposure of the porous anode/electrolyte to fuel. The cathode is then formed on the electrolyte by depositing a cathode thin film cap using known film deposition techniques. Further processing may be used to increase the porosity of the electrodes. The metal foil may be treated to have an atomically ordered surface, which makes possible an atomically ordered anode and atomically ordered thin film electrolyte for improved performance.

Abstract: A method of manufacturing a Fe-sheathed MgB2 wire includes the steps of: I. Selecting a carbon steel tube with 0.1% to 0.3% carbon; a. Crimping a first end of the tube; b. Selecting a Mg powder at least 99.8% pure, and sized for 325 mesh; c. Selecting a B powder, at least 99.99% pure, and sized for 325 mesh; d. Stoichiometrically mixing the Mg and B powders to form a mixture powder; e. Milling the mixture powder by using high-energy ball mill for 0.5 to 6 hours and using stainless steel mixing balls and vial, wherein the mass ratio of ball to powder is 20:1, to form a milled powder; f. Filling and packing the tube in an argon atmosphere with the milled powder to create a packing density of about 1.5 g/cm3; g. Crimping the second end of the tube to create a powder-filled tube; h. Rolling the powder-filled tube to create the Fe-sheathed MgB2 wire; and i. Annealing the as-rolled wire at 600 to 900° C. for 0.5 to 3 hours at high purity argon environment to create superconducting wire.