Patents Assigned to Bondtech, Inc.
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Patent number: 8651363Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding not requiring a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded requires a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.Type: GrantFiled: November 16, 2011Date of Patent: February 18, 2014Assignees: Bondtech, Inc., Tadatomo SUGAInventors: Tadatomo Suga, Masuaki Okada
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Publication number: 20120104076Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding not requiring a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded requires a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.Type: ApplicationFiled: November 16, 2011Publication date: May 3, 2012Applicants: Tadatomo SUGA, Bondtech, Inc.Inventors: TADATOMO SUGA, Masuaki Okada
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Patent number: 8091764Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.Type: GrantFiled: June 21, 2010Date of Patent: January 10, 2012Assignees: Bondtech, Inc.Inventors: Tadatomo Suga, Masuaki Okada
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Publication number: 20100252615Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.Type: ApplicationFiled: June 21, 2010Publication date: October 7, 2010Applicants: Bondtech, Inc., Tadatomo SUGAInventors: Tadatomo Suga, Masuaki Okada
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Patent number: 7784670Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.Type: GrantFiled: January 21, 2005Date of Patent: August 31, 2010Assignees: Bondtech Inc.Inventors: Tadatomo Suga, Masuaki Okada
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Patent number: 7645681Abstract: Conventional heat bonding and anodic bonding require heating at high temperature and for a long time, leading to poor production efficiency and occurrence of a warp due to a difference in thermal expansion, resulting in a defective device. Such a problem is solved. An upper wafer 7 made of glass and a lower wafer 8 made of Si are surface-activated using an energy wave before performing anodic bonding, thereby performing bonding at low temperature and increasing a bonding strength. In addition, preliminary bonding due to surface activation is performed before main bonding due to anodic bonding is performed in a separate step or device, thereby increasing production efficiency, and enabling bonding of a three-layer structure without occurrence of a warp.Type: GrantFiled: December 2, 2004Date of Patent: January 12, 2010Assignee: Bondtech, Inc.Inventor: Masuaki Okada
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Publication number: 20080245843Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.Type: ApplicationFiled: January 21, 2005Publication date: October 9, 2008Applicant: BONDTECH INC.Inventors: Tadatomo Suga, Masuaki Okada
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Publication number: 20070110917Abstract: In a method of bonding objects to be bonded together in a solid phase at low temperature after subjecting bonding surfaces of the objects to be bonded to a hydrophilic treatment using a plasma, the objects to be bonded are conventionally handled in the atmospheric air for bonding, so that adhesion of organic substances in the atmospheric air leads to a reduction in bonding strength. Therefore, diffusion bonding needs to be performed at a temperature of as high as 1100° C. in the conventional art. According to the present invention, firm bond can be achieved at low temperature.Type: ApplicationFiled: December 2, 2004Publication date: May 17, 2007Applicant: Bondtech, IncInventor: Masuaki Okada
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Publication number: 20070111471Abstract: Conventional heat bonding and anodic bonding require heating at high temperature and for a long time, leading to poor production efficiency and occurrence of a warp due to a difference in thermal expansion, resulting in a defective device. Such a problem is solved. An upper wafer 7 made of glass and a lower wafer 8 made of Si are surface-activated using an energy wave before performing anodic bonding, thereby performing bonding at low temperature and increasing a bonding strength. In addition, preliminary bonding due to surface activation is performed before main bonding due to anodic bonding is performed in a separate step or device, thereby increasing production efficiency, and enabling bonding of a three-layer structure without occurrence of a warp.Type: ApplicationFiled: December 2, 2004Publication date: May 17, 2007Applicant: Bondtech, Inc.Inventor: Masuaki Okada