Patents Assigned to Boston MicroSystems, Inc.
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Patent number: 6953977Abstract: A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.Type: GrantFiled: October 29, 2002Date of Patent: October 11, 2005Assignee: Boston MicroSystems, Inc.Inventors: Richard Mlcak, Dharanipal Doppalapudi, Harry L. Tuller
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Publication number: 20030193073Abstract: A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.Type: ApplicationFiled: April 16, 2002Publication date: October 16, 2003Applicant: Boston MicroSystems, Inc.Inventors: Harry L. Tuller, Richard Mlcak
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Patent number: 6627965Abstract: A micromechanical device includes a single crystal micromechanical structure where at least a portion of the micromechanical structure is capable of performing a mechanical motion. An epitaxial layer covers at least a portion of the micromechanical structure. In one embodiment, the micromechanical structure and the epitaxial layer are formed of different materials.Type: GrantFiled: February 8, 2000Date of Patent: September 30, 2003Assignee: Boston MicroSystems, Inc.Inventors: Harry L. Tuller, Richard Mlcak, Dharanipal Doppalapudi
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Patent number: 6627959Abstract: A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.Type: GrantFiled: April 16, 2002Date of Patent: September 30, 2003Assignee: Boston MicroSystems, Inc.Inventors: Harry L. Tuller, Richard Mlcak
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Publication number: 20030119220Abstract: A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.Type: ApplicationFiled: October 29, 2002Publication date: June 26, 2003Applicant: Boston MicroSystems, Inc.Inventors: Richard Mlcak, Dharanipal Doppalapudi, Harry L. Tuller
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Patent number: 6544674Abstract: An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3SiC2 that is deposited on the silicon carbide component.Type: GrantFiled: August 27, 2001Date of Patent: April 8, 2003Assignee: Boston MicroSystems, Inc.Inventors: Harry L. Tuller, Marlene A. Spears, Richard Micak
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Patent number: 6511915Abstract: A method of electrochemically etching a device, including forming a semiconductor substrate having a p-type semiconductor region on an n-type semiconductor region. A discrete semiconductor region is formed on the p-type semiconductor region and is isolated from the n-type semiconductor region. The n-type semiconductor region is exposed to an electrolyte with an electrical bias applied between the n-type semiconductor region and the electrolyte. The n-type semiconductor region is also exposed to radiation having energy sufficient to excite electron-hole pairs. In addition, a p-n junction reverse bias is applied between the p-type semiconductor region and the n-type semiconductor region to prevent the p-type semiconductor region and the discrete semiconductor region from etching while portions of the n-type semiconductor region exposed to the electrolyte and the radiation are etched.Type: GrantFiled: March 26, 2001Date of Patent: January 28, 2003Assignee: Boston MicroSystems, Inc.Inventor: Richard Mlcak
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Publication number: 20020137348Abstract: A method of electrochemically etching a device, including forming a semiconductor substrate having a p-type semiconductor region on an n-type semiconductor region. A discrete semiconductor region is formed on the p-type semiconductor region and is isolated from the n-type semiconductor region. The n-type semiconductor region is exposed to an electrolyte with an electrical bias applied between the n-type semiconductor region and the electrolyte. The n-type semiconductor region is also exposed to radiation having energy sufficient to excite electron-hole pairs. In addition, a p-n junction reverse bias is applied between the p-type semiconductor region and the n-type semiconductor region to prevent the p-type semiconductor region and the discrete semiconductor region from etching while portions of the n-type semiconductor region exposed to the electrolyte and the radiation are etched.Type: ApplicationFiled: March 26, 2001Publication date: September 26, 2002Applicant: Boston MicroSystems, Inc.Inventor: Richard Mlcak
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Patent number: 6441716Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.Type: GrantFiled: June 12, 2001Date of Patent: August 27, 2002Assignee: Boston MicroSystems, Inc.Inventors: Dharanipal Doppalapudi, Theodore D. Moustakas, Richard Mlcak, Harry L. Tuller
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Publication number: 20020070841Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.Type: ApplicationFiled: June 12, 2001Publication date: June 13, 2002Applicant: Boston MicroSystems, Inc.Inventors: Dharanipal Doppalapudi, Theodore D. Moustakas, Richard Mlcak, Harry L. Tuller
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Publication number: 20020068488Abstract: An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3SiC2 that is deposited on the silicon carbide component.Type: ApplicationFiled: August 27, 2001Publication date: June 6, 2002Applicant: Boston MicroSystems, Inc.Inventors: Harry L. Tuller, Marlene A. Spears, Richard Mlcak
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Patent number: 6275137Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.Type: GrantFiled: February 8, 2000Date of Patent: August 14, 2001Assignee: Boston MicroSystems, Inc.Inventors: Dharanipal Doppalapudi, Theodore D. Moustakas, Richard Mlcak, Harry L. Tuller