Abstract: A process for producing a photovoltaic device having a substrate comprising silicon doped with a first dopant, the process comprising the steps of: a. forming a first layer over a front surface of the substrate, the first layer comprising a second dopant of a conductivity type opposite the first dopant; b. forming a second surface coating over the first layer; c. forming elongate grooves reaching or entering the silicon substrate, d. forming a third layer within the grooves, the layer comprising a third dopant of a conductivity type opposite to the first dopant; e. forming a contact finger system which intersects with the grooves to provide an electrically conducting front contact; and f. forming a second contact.

Abstract: A process for making a photovoltaic cell comprising forming a first layer on a front surface of a semiconductor wafer, the wafer comprising a first dopant and the first layer comprising a dopant of a conductivity type opposite the first dopant; depositing a surface coating on the front surface over the first layer; forming grooves in the front surface after depositing the surface coating thereon; doping the grooves with a dopant having a conductivity opposite the first dopant; treating a back surface of the wafer to remove at least substantially all dopant having a conductivity type opposite the first dopant; forming a back surface field; forming a back electrical contact over the back surface; and adding an electrically conductive material to the grooves to form a front electrical contact.