Abstract: Efficient broader spectrum monolithic solar cells are produced by coupling a CIS or CIGS polycrystalline semiconductor to an amorphous silicon semiconductor. Coupling can be accomplished with a n-type conductor, such as cadmium sulfide or microcrystalline n-doped amorphous silicon. Cadmium sulfide can be deposited on the CIS or CIGS polycrystalline semiconductor by solution growth, sputtering or evaporation. A transparent conductive oxide can be deposited on the cadmium sulfide by low pressure chemical vapor deposition. The microcrystalline n-doped amorphous silicon and the amorphous silicon semiconductor can be deposited by enhanced plasma chemical vapor deposition. The amorphous silicon can comprise: hydrogenated amorphous silicon, hydrogenated amorphous silicon carbon, or hydrogenated amorphous silicon germanium. Triple junction solar cells can be produced with an amorphous silicon front cell, an amorphous silicon germanium middle cell, and a CIS or CIGS polycrystalline back cell, on a substrate.

Abstract: A multi-purpose photovoltaic module framing system is provided which combines and integrates the framing system with the photovoltaic electrical system. The user friendly framing system is easy to install and can be directly mounted to a roof surface without auxiliary brackets and beams. The economical framing system has aesthetically pleasing frames to mechanically hold and support photovoltaic modules. The multi-purpose frames desirably have integral electrical raceways which conceal and protect most electrical components and wires. The reliable frames are specially constructed and arranged to permit easy access to output wires and do not require junction boxes. Ground clips can be directly connected to the convenient framing system.

Abstract: High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate.