Abstract: Plasma etching device and process in which a chamber is divided into two regions by a perforated screen. Objects to be etched are placed in one region, and a plasma is formed in the other region. Etching occurs in the first region, and structure is included for heating the etched objects in the first region to facilitate the removal of photoresist used to define the areas to be etched.

Abstract: Gas plasma system and process which are particularly suitable for photoresist stripping and descumming operations. A wafer is placed on a heated platen in a processing chamber and is lifted away from the platen to control thermal contact between the wafer and the platen. The front side of the wafer is also heated with radiant heat energy, and the temperature of the platen is adjusted to control the temperature of the wafer. In the disclosed embodiments, a gas plasma is generated outside the processing chamber and introduced into the chamber through a gas distribution plate which is also transparent to the radiant heat energy.

Abstract: Apparatus for processing semiconductor wafers and the like in an ionized gas plasma. A reaction chamber is divided into two separate regions, and driven and grounded electrodes are positioned outside the reaction chamber adjacent to respective ones of the regions. Wafers or other workpieces to be processed are placed in the region adjacent to the grounded electrode, and the gas to be ionized is introduced into the region adjacent to the driven electrode. The ionization of the gas is confined to the region adjacent to the driven electrode, and the active species pass through the perforated shield to the wafers or other workpieces.

Abstract: Process and gas mixture for etching aluminum in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the anisotropic character of the etch. A stable uniform plasma is generated at relatively high pressure and power levels, and this provides substantially faster removal of aluminum than has heretofore been possible in planar reactors.

Abstract: Power supply and method in which the primary current to a transformer is switched on and off to maintain the output of the supply at a desired level. When the energizing current is off, an additional current is applied to the transformer to maintain the core at a level of magnetization such that the full hysteresis characteristic of the transformer is utilized during the next half cycle of operation.

Abstract: Process and gas mixture for etching silicon dioxide and/or silicon nitride in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the selectivity of the etch. The process is carried out at relatively high pressure and power levels and provides substantially faster removal of silicon dioxide and/or silicon nitride than has heretofore been possible in planar reactors.

Abstract: Automated reactor system and process for etching or otherwise processing semiconductor wafers in a plasma environment. The wafers are carried into and out of a reaction chamber by a conveyor and processed on an individual basis. Within the chamber, an electrode mounted on a swinging arm carries each wafer from the conveyor to a processing position adjacent to a stationary electrode. Gas is admitted to the chamber, and the electrodes are energized to ionize the gas and form a plasma for processing the wafer between the electrodes.

Abstract: Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF.sub.4 or SiF.sub.4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si.sub.3 N.sub.4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.