Abstract: In one aspect, there is an apparatus that comprises a plurality of light emitting chips that each have active areas that have elongated aspect ratios. This chips are mounted in a generally rectangular package. The chips are each arranged around a periphery of the package so that each narrow side of each chip abuts either a sidewall forming the periphery of the package or a long side another of the chips. Some of the chips receive a biasing voltage through one or more other of the chips.

Abstract: A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an n-type GaN layer, a light-emitting active layer involving indium, and a p-type GaN layer. The n-type GaN layer has a thickness of at least 500 nm. A Low Resistance Layer (LRL) is disposed between the substrate and the PAN structure such that the LRL is in contact with the bottom of the n-layer. In one example, the LRL is an AlGaN/GaN superlattice structure whose sheet resistance is lower than the sheet resistance of the n-type GnA layer. The LRL reduces current crowding by conducting current laterally under the n-type GaN layer. The LRL reduces defect density by preventing dislocation threads in the underlying GaN template from extending up into the PAN structure.