Abstract: A terminal structure includes an electrically conductive post, an electrically conductive flange, and a stress buffer. The electrically conductive post has a bottom surface at a first level and an upper sidewall laterally covered by the stress buffer. The stress buffer has a bottom surface at a second level between the top surface and the bottom surface of the electrically conductive post. The electrically conductive flange extends laterally from the upper sidewall of the electrically conductive post to an outer peripheral edge thereof, and has a depression surface at a third level between the top surface and the bottom surface of the electrically conductive post. Accordingly, the terminal structure has multi-level staggered configuration and is advantageous to achieving the desired wetting height for robust visual inspection and improving primary and secondary board-level reliability.

Abstract: A semiconductor assembly includes a top substrate and a base substrate attached to top and bottom electrode layers of a semiconductor device, respectively. The top substrate includes an electrode connection plate thermally conductible with and electrically connected to the top electrode layer of the semiconductor device and vertical posts protruding from the electrode connection plate and electrically connected to the base substrate. The base substrate includes an electrode connection slug embedded in a dielectric layer and thermally conductible with and electrically connected to the bottom electrode layer of the semiconductor device and first and second routing circuitries deposited on two opposite surfaces of the dielectric layer, respectively, and electrically connected to each other.

Abstract: The leadframe substrate mainly includes a modulator, a plurality of metal leads, a resin layer and a crack inhibiting structure. The resin layer provides mechanical bonds between the modulator and the metal leads disposed about peripheral sidewalls of the modulator. The crack inhibiting structure includes a continuous interlocking fiber sheet that covers the modulator/resin interfaces, so that the segregation induced along the modulator/resin interfaces or cracks formed within the resin layer can be prevented or restrained from extending to the top surfaces, thereby ensuring the signal integrity of the flip chip assembly.

Abstract: The interconnect substrate mainly includes a stiffener, a core layer, a warp balancer and a routing circuitry. The stiffener has an elastic modulus higher than 100 GPa and is laterally surrounded by the core layer. The warp balancer is disposed over the top surface of the core layer and laterally surrounds a cavity aligned with the stiffener. The routing circuitry is disposed under the bottom surfaces of the stiffener and the core layer and electrically connected to the stiffener. By the high modulus of the stiffener, local thermo-mechanical stress induced by un-even thickness can be counterbalanced. Furthermore, adjusting the ratio of the stiffener thickness to the cavity dimension can maintain the cavity area stiffness and modulate the global flatness.

Abstract: The wiring substrate includes a cavity and a plurality of metal leads disposed around the cavity. The metal leads are bonded with a resin compound and provide horizontal and vertical routing for a semiconductor device to be disposed in the cavity. The resin compound fills in spaces between the metal leads and surrounds the cavity and provides a dielectric platform for a re-distribution layer or a build-up circuitry optionally deposited thereon.

Abstract: A face-to-face semiconductor assembly is characterized by a semiconductor device positioned in a dielectric recess of a core base and surrounded by an array of metal posts. The recess in the core provides lateral displacement control between the device and the metal posts, and the minimal height of the metal posts needed for the vertical connection between both opposite sides of the core base can be reduced by the amount equal to the depth of the recess. Further, the semiconductor device is face-to-face electrically coupled to another semiconductor device through a buildup circuitry therebetween.

Abstract: A wiring board includes an electronic component laterally surrounded by a leadframe, and first and second buildup circuitries disposed beyond the space laterally surrounded by the leadframe and extending over the leadframe. The electronic component includes a first routing circuitry, an encapsulant, optionally an array of vertical connecting elements and optionally a second routing circuitry integrated together. The first routing circuitry provides primary routing for the semiconductor device, whereas the first and second buildup circuitries not only provides further routing, but also mechanically binds the electronic component with the leadframe. The leadframe provides electrical connection between the first buildup circuitry and the second buildup circuitry.

Abstract: The wiring substrate includes a cavity and a plurality of vertical connecting channels disposed around the cavity. The vertical connecting channels are bonded with a resin compound and electrically connected to a routing circuitry or a conducting layer under the cavity. The bottom of the cavity is covered by a dielectric layer of the routing circuitry or the resin compound, and an aperture is formed through the dielectric layer of the routing circuitry or the resin compound to be communicated with the cavity. As a result, a semiconductor device can be face-down disposed in the cavity and electrically connected to the routing circuitry or the conducting layer by bonding wires extending through the aperture.

Abstract: The wiring substrate includes a cavity and a plurality of metal leads disposed around the cavity. The metal leads are bonded with a resin compound and electrically connected to a buildup circuitry or a re-distribution layer under the cavity. The bottom of the cavity is covered by a dielectric layer of the buildup circuitry or the resin compound, and an aperture is formed through the dielectric layer of the buildup circuitry or the resin compound to be communicated with the cavity. As a result, a semiconductor device can be face-down disposed in the cavity and electrically connected to the buildup circuitry or the re-distribution layer by bonding wires extending through the aperture.