Abstract: A red-light emitting device comprising: a blue LED chip; and a photoluminescence material comprising a narrowband red fluoride phosphor and a broadband red phosphor. The narrowband red phosphor may comprise a manganese-activated fluoride phosphor of composition K2SiF6:Mn4+, K2GeF6:Mn4+, and K2TiF6:Mn4+.

Abstract: A light-emitting diode chip is provided and includes: a first doping-type semiconductor layer, a second doping-type semiconductor layer, and a multiple quantum well structure layer formed between the first doping-type semiconductor layer and the second doping-type semiconductor layer. The multiple quantum well structure layer includes multiple first quantum well structures and at least one second quantum well structure stacked in a distance direction of the first and second doping-type semiconductor layers. The first quantum well structures are used to emit first color light, and the at least second well structure is used to emit second color light different from the first color light. A total number of well layer of the at least one second quantum well structure is 1/15˜? of a total number of well layer of the first quantum well structures located between the at least one second quantum well structure and the second doping-type semiconductor layer.

Abstract: Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

Abstract: A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Abstract: An exemplary white light emitting device includes a plurality of LEDs disposed on a substrate, where the LEDs emit blue light at substantially the same correlated color temperature; a first photoluminescence material layer disposed over a first subset of the LEDs; a second photoluminescence material layer disposed over a second subset of the LEDs different from the first subset of the plurality of LEDs, the second photoluminescence material layer separate from the first photoluminescence material layer; and a diffusing layer separate from and disposed over the first and second photoluminescence layers, where the diffusing layer is associated with a plurality of light scattering particles.

Abstract: Some embodiments of the disclosure provide for a lighting system including a substrate. The lighting system includes several blue light emitting diodes (LEDs) supported by the substrate. The lighting system includes at least one red LED supported by the substrate. The lighting system includes a light conversion material covering the blue LEDs and the at least one red LED.

Abstract: A COB type photoelectric device is provided. The COB type photoelectric device includes: a metallic substrate including a photoelectric element fixing area; a dam disposed on the metallic substrate and surrounding the photoelectric element fixing area; first photoelectric elements disposed on the metallic substrate and in the photoelectric element fixing area; a KSF phosphor based layer disposed on the first photoelectric elements and being not in contact with the metallic substrate; and an isolation layer disposed in the dam and covering the KSF phosphor based layer. The KSF phosphor based layer includes a KSF phosphor. The COB type photoelectric device can make full use of high luminous efficiency performance of the KSF, and improve luminous efficiency of the COB type photoelectric device while maintaining stability of the KSF.

Abstract: Light emitting diode (LED) constructions comprise an LED having a pair of electrical contacts along a bottom surface. A lens is disposed over the LED and covers a portion of the LED bottom surface. A pair of electrical terminals is connected with respective LED contacts, are sized larger than the contacts, and connect with the lens material along the LED bottom surface. A wavelength converting material may be interposed between the LED and the lens. LED constructions may comprise a number of LEDs, where the light emitted by each LED differs from one another by about 2.5 nm or less. LED constructions are made by attaching 2 or more LEDs to a common wafer by adhesive layer, forming a lens on a wafer level over each LED to provide a rigid structure, removing the common wafer, forming the electrical contacts on a wafer level, and then separating the LEDs.

Abstract: Side light LED troffer tube. In an aspect, a side light LED tube is provided that includes a tube having at least one light receiving portion configured to receive light and gradient optics formed on the tube. The gradient optics providing a transparency gradient configured to distribute the light to achieve a selected emitted light intensity variation across a selected surface of the tube.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of the well layers that are closest to the first semiconductor layer are the third well layers, and the first well layer is closer to the second semiconductor layer than the first semiconductor layer.

Abstract: A lighting system that is part of a headlight module of a motor vehicle includes an array of LED light sources that include no organic materials. Each light source includes a glass lens attached to a phosphor glass converter plate, which itself is attached to an LED die that is flip-chip mounted on a mounting substrate. The converter plate includes phosphor particles embedded in glass. Each lens is disposed laterally over a single LED die. The converter plate is attached to the LED die by a first bonding layer, and the lens is attached to the converter plate by a second bonding layer. Both bonding layers are made of a metal oxide and are thinner than the converter plate. Either each lens does not extend horizontally outside the lateral boundary of each converter plate, or the lens portions centered on each LED die are part of a unitary lens array.

Abstract: A lamp includes an extended planar light source, and an optical element arranged with the light source, wherein the optical element comprises an outer surface having an indented cusp substantially over the light source. A lamp includes an extended planar light source, and an optical element arranged with the light source, wherein the optical element comprises an outer surface having a portion at a peripheral edge comprising a curvature configured to redirect light emitted from the light source by total internal reflection.

Abstract: Light emitting assemblies comprise a plurality of Light Emitting Diode (LED) dies arranged and attached to common substrate to form an LED array having a desired optimum packing density. The LED dies are wired to one another and are attached to landing pads on the substrate for receiving power from an external electrical source via an interconnect device. The assembly comprises a lens structure, wherein each LED die comprises an optical lens disposed thereover that is configured to promote optimal light transmission. Each optical lens has a diameter that is between about 1.5 to 3 times the size of a respective LED die, and is shaped in the form of a hemisphere. Fillet segments are integral with and interposed between the adjacent optical lenses, and provide sufficient space between adjacent optical lenses so that the diameters of adjacent optical lenses do not intersect with one another.

Abstract: Various methods and apparatuses are disclosed. A method may include disposing at least one die on a location on a carrier substrate, forming at least one stud bump on each of at least one die, forming a phosphor layer on the at least one stud bump and the at least one die, removing a top portion of the phosphor layer to expose the at least one stud bump, and removing a side portion of the phosphor layer located between two adjacent dies. An apparatus may include a die comprising top, bottom, and side surfaces. A phosphor layer may be disposed on the top, bottom, and side surfaces of the die. The phosphor layer may have substantially equal thicknesses on the top and side surfaces of the die as well as one or more stud bumps disposed on the top surface of the die.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a first solid-state light source that generates blue light with a blue photon flux; and a second solid-state light source that generates red light with a red photon flux; wherein a ratio of the blue photon flux to red photon flux is from about 1:3 to about 3:1. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

Abstract: An exemplary method of manufacturing a white light emitting device may include providing first LEDs and second LEDs operable to generate excitation light having a dominant wavelength in a range from 440 nm to 480 nm; providing a first photoluminescence material which generates light having a peak emission wavelength in a range from 500 nm to 590 nm; providing a second photoluminescence material which generates light having a peak emission wavelength in a range from 600 nm to 650 nm; disposing the second photoluminescence material over and into direct contact with the second LED; and disposing the first photoluminescence material over the first and second LEDs.

Abstract: A light source that is adapted to replace existing fluorescent tubes in an existing fluorescent light fixture is disclosed. The light source includes a plurality of LEDs mounted on a heat-dissipating structure, first and second plug adapters that mate with the florescent tube connectors of the fluorescent tube the light source is to replace, and a power adapter that converts power from a fluorescent tube ballast presented on the first and second plug adapters to DC power that powers the LEDs. The light source is powered from the output of the existing fluorescent ballast. The light source can utilize the existing metallic enclosure as a heat-radiating surface and/or direct air heat transfer from the surface of the heat-dissipating structure.