Abstract: A solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus are provided that are capable of reducing memory circuits of a column reading system, so that the column reading system can achieve a reduced layout area and eventually a reduced size. A column reading circuit includes an AD converting part and a calculating part. The AD converting part is configured to analog-to-digital convert a read-out reset signal and a read-out signal of a pixel signal read to a vertical signal line into an n-bit digital pixel signal. The calculating part includes an n-bit asynchronous counter including a retention circuit with a control logic function, which is configured to obtain a difference between an n-bit read-out reset signal and an n-bit read-out signal produced by the AD conversion performed by the AD converting part.

Abstract: Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of reading signals produced with different conversion gains and having different signal directions. A pixel signal processing part 400 includes a first reading part 410 and a second reading part 420. Of a pixel signal PIXOUT input into an input node ND401, the first reading part 410 inverts the signal direction of a first-conversion-gain signal (HCGRST, HCGSIG) and outputs an inverted first-conversion-gain signal (HCGRST, HCGSIG), which has been subjected to inversion and amplification, to an AD converting part 430 via a connection node ND402. Of the pixel signal PIXOUT input into the input node ND401, the second reading part 420 keeps the signal direction of a second-conversion-gain signal (LCGSIG, LCGRST) unchanged, and outputs a non-inverted second-conversion-gain signal (LCGSIG, LCGRST) to the AD converting part 430 via the connection node ND402.

Abstract: A solid-state imaging device, a method for driving the same, and an electronic apparatus can achieve a high dynamic range based on multiple exposure technique, where images captured with different exposure durations are combined, with it being possible to prevent motion artifacts and LED flickers. A pixel has a 4:0 configuration. The pixel is divided into, for example, four sub-pixels all of which have the same color (for example, G (green)). An access control part sets different charge integration periods and different charge storage starting times between photoelectric conversion parts PD of the sub-pixels and controls the charge integration periods such that they overlap each other. In other words, the access control part sets different charge integration periods and different charge storage starting times, the number of which corresponds to the number of sub-pixels having the same color, and controls the charge integration periods such that they overlap each other.

Abstract: A photoelectric conversion reading part of a pixel includes a photoelectric conversion element for storing therein, in a storing period, charges generated by the photoelectric conversion, a transfer element for transferring, in a transfer period following the storing period, the charges stored in the photoelectric conversion element, an output node to which the charges stored in the photoelectric conversion element are transferred through the transfer element, a reset element for resetting, in a reset period, the output node to a predetermined potential, an output buffer part for converting the charges in the output node into a voltage signal at a level determined by the amount of the charges and outputting the voltage signal as the pixel signal, and an output voltage control part for controlling an output signal level of the pixel signal from the output buffer part to a controlled level determined by the operational state.

Abstract: Provided are a solid-state imaging device, a method for manufacturing a solid-state imaging device and an electronic apparatus that produce little crosstalk between adjacent sub-pixels, can reduce the influence of the luminance shading, and can even prevent degradation in the sensitivity at the optical center. A multi-pixel includes a back-side separating part separating a plurality of adjacent sub-pixels from each other, and a lens part including a single microlens allowing light to enter photoelectric converting regions of sub-pixels. Here, the optical center of the microlens is positioned on the location where the back side separating part is formed, and the back side separating part is formed such that at least the optical center region thereof exhibits lower reflection than the other region of the back side separating part.

Abstract: In a pixel 200, a floating diffusion FD11 and a first capacitor CS11 are selectively connected to each other via a first connection element LG11-Tr, to change the capacitance of the floating diffusion FD11 between a first capacitance and a second capacitance, thereby changing the conversion gain between a first conversion gain (HCG) corresponding to the first capacitance and a second conversion gain (MCG) corresponding to the second capacitance. The floating diffusion FD11 and a second capacitor CS12 are connected together through a second connection element SG11-Tr to change the capacitance of the floating diffusion FD11 to a third capacitance, thereby changing the conversion gain of the source following transistor SF11-Tr to a third conversion gain (LCG) corresponding to the third capacitance.

Abstract: A pixel includes photoelectric conversion elements for generating charges through photoelectric conversion and storing the generated charges in a storing period, transfer elements for transferring the stored charges, an output node to which the charges stored in the photoelectric conversion elements are transferred through the transfer elements, an output buffer part for converting the charges in the output node into a voltage signal at a level determined by the amount of the charges, and a comparator for performing a comparing operation of comparing the voltage signal from the output buffer part against a referential voltage and outputting a digital comparison result signal. The comparator performs, under control of a reading part, the comparing operation on read-out signals read in at least two different modes through different sequences of operations for reading performed on charges stored in the different photoelectric conversion elements.

Abstract: In a solid-state imaging device 10, a signal retaining part 212 is provided with a first sampling part 2122 and a second sampling part 2123, each of which is formed by one sampling transistor (1T) and one sampling capacitor (1C). The coupling node between the two sampling parts is a retaining node ND23, which is used as a bidirectional port. With such a configuration, the solid-state imaging device 10 is configured as a solid-state imaging element having a global shutter function that achieves substantially the same signal amplitude as in the differential reading scheme with four transistors. Thus, the solid-state imaging device 10 can achieve the reduced increase in number of transistors, prevent the occurrence of signal amplitude loss in the sampling parts, maintain high pixel sensitivity and reduce input conversion noise.

Abstract: Provided are a solid-state imaging device, a method for driving a solid-state imaging device and an electronic apparatus. A memory part is formed using an SRAM serving as an ADC memory, and an ADC code is written into and read from the memory part under control of a reading part. In the SRAM, a power gating transistor is additionally provided to both of a power supply node (between a power supply and a virtual power supply node) and a ground node (between a virtual reference potential node and a reference potential) for the purposes of blocking the shoot-through currents from the bit cells during the writing operation. The power gating transistors are controlled by the reading part so as to operate as either a weak current source or switch.

Abstract: Disclosure herein relates to a unit pixel structure incorporating multiple photodiodes is disclosed. The unit pixel is formed in a semiconductive stack. The unit pixel includes a sensor well region, a floating diffusion region, a first gate structure and a second gate structure. The first gate structure is disposed over the semiconductive stack and the second gate structure extends into the semiconductive stack.

Abstract: A pixel PXL includes a first photodiode PDSL and a second photodiode PSLS having different well capacities and responsivities, transfer transistors TGSL-Tr, TGLS-Tr for transferring the charges stored in the photodiodes to a floating diffusion FD, and a capacitance changing part 80 for changing the capacitance of the floating diffusion depending on a capacitance changing signal. The first well capacity of the first photodiode PDSL is smaller than the second well capacity of the second photodiode PDLS, and the first responsivity of the first photodiode PDSL is larger than the second responsivity of the second photodiode PDLS. With these configurations, it becomes possible to realize a widened dynamic range, prevent the read-out noise from affecting the performance, and eventually achieve improved image quality.

Abstract: Provided is a solid-state imaging device. A comparator is configured to perform a first comparing operation of outputting a digital first comparison result signal obtained by processing the overflow charges overflowing from PD1 to FD1 in the storing period, a second comparing operation of outputting a digital second comparison result signal obtained by processing the charges stored in PD1 that are transferred to FD1 in the transfer period, and a third comparing operation of outputting a digital third comparison result signal obtained by processing the charges stored in PD1 that are transferred to FD1 in the transfer period and the charges stored in the charge storing part, and a memory control part controls whether or not to allow writing of the data corresponding to the third comparison result signal into a memory part, depending on the states of the first and second comparison result signals.

Abstract: Provided are a solid-state imaging device, a method for driving the same and an electronic apparatus where a comparator in an AD converter in a digital pixel is characterized by low power consumption and low peak current and that are capable of operating at low voltage and achieving high linearity across the entire input range. A comparator is constituted by two stages of preamplifiers with a clamp diode and two serial current-controlling inverters, and every branch is current-controlled. The two stages of the preamplifiers and the following two consecutive inverters are all current-controlled such that low power consumption and low peak current are realized. A trade-off can be made between the noise and the comparator speed by controlling the bandwidth of the comparator using the bias current. This is beneficial to more than one comparator operation mode.

Abstract: One object is to provide a solid-state imaging device that can capture visible light images such as RGB images and infrared images such as NIR images and maintain a high light-receiving sensitivity for infrared light, a method of driving such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes: a pixel part having unit pixel groups arranged therein, the unit pixel groups each including a plurality of pixels at least for visible light that perform photoelectric conversion; and a reading part for reading pixel signals from the pixel part, wherein the plurality of pixels for visible light have a light-receiving sensitivity for infrared light, and in an infrared reading mode, the reading part is capable of adding together signals for infrared light read from the plurality of pixels for visible light.

Abstract: One object is to provide a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of removing a noise gap at a connection point between the low conversion gain data and the high conversion gain data, suppressing increase of power consumption and circuit areas, providing a wide dynamic range, and thus achieving high image quality. An amplifying part for amplifying a plurality of pixel signals read out from a pixel includes an amplifier. The amplifier includes an inverting input terminal and a non-inverting input terminal. The inverting input terminal includes a first inverting input channel and a second inverting input channel. The first inverting input channel is connected to a second node, and the second inverting input channel is connected to a third node. A capacitance of a second sampling capacitor is 8C, and a capacitance of a first sampling capacitor is C.

Abstract: In a solid-state imaging device 10, the first binning switch 81 is formed such that a MOS capacitance and a wire capacitance of a wire connected to the binning switch 81, each having a value in accordance with an ON or OFF state, are added to a capacitance of a floating diffusion FD of a pixel PXL to be read, so as to optimize the capacitance of the floating diffusion FD and optimally adjust a conversion gain in accordance with a mode. This operation increases an image quality.