Patents Assigned to Brion Technologies, Inc.
  • Publication number: 20110116067
    Abstract: A method of optimizing an illumination pupil shape for a lithographic process 1 comprises identifying a target pattern (206) to be imaged by said lithographic process. It further comprises identifying at least one optimization point (262) in said target pattern and identifying at least one design for manufacturing metric (270) per optimization point. Additionally it comprises selecting a set of illumination source points (274) based on the identified at least one design for manufacturing metric and determining the illumination pupil shape (284) based on the selected set of illumination source points.
    Type: Application
    Filed: July 7, 2009
    Publication date: May 19, 2011
    Applicant: Brion Technologies, Inc.
    Inventors: Jun Ye, Yu Cao, Hanying Feng
  • Publication number: 20100180251
    Abstract: One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
    Type: Application
    Filed: February 19, 2010
    Publication date: July 15, 2010
    Applicant: Brion Technology, Inc.
    Inventors: Jun Ye, Jiangwei Li, Stefan Hunsche
  • Publication number: 20100162199
    Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
    Type: Application
    Filed: March 10, 2010
    Publication date: June 24, 2010
    Applicant: Brion Technology, Inc.
    Inventors: Peng Liu, Yu Cao, Luoqi Chen, Jun Ye
  • Publication number: 20100161093
    Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.
    Type: Application
    Filed: March 10, 2010
    Publication date: June 24, 2010
    Applicant: Brion Technology, Inc.
    Inventors: William S. Wong, Been-Der Chen, Yenwen Lu, Jiangwei Li, Tatsuo Nishibe
  • Publication number: 20100151364
    Abstract: A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.
    Type: Application
    Filed: February 23, 2010
    Publication date: June 17, 2010
    Applicant: Brion Technology, Inc.
    Inventors: Jun Ye, Moshe E. Preil, Xun Chen, Shauh-Teh Juang, James Wiley
  • Patent number: 7707538
    Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.
    Type: Grant
    Filed: June 15, 2007
    Date of Patent: April 27, 2010
    Assignee: Brion Technologies, Inc.
    Inventors: William S. Wong, Been-Der Chen, Yenwen Lu, Jiangwei Li, Tatsuo Nishibe
  • Patent number: 7703069
    Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
    Type: Grant
    Filed: August 14, 2007
    Date of Patent: April 20, 2010
    Assignee: Brion Technologies, Inc.
    Inventors: Peng Liu, Yu Cao, Luogi Chen, Jun Ye
  • Patent number: 7695876
    Abstract: A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: April 13, 2010
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Moshe E. Preil, Xun Chen, Shauh-Teh Juang, James Wiley
  • Patent number: 7694267
    Abstract: One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
    Type: Grant
    Filed: February 2, 2007
    Date of Patent: April 6, 2010
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Jiangwei Li, Stefan Hunsche
  • Patent number: 7617477
    Abstract: Methods are disclosed for selecting and optimizing an exposure tool using an individual mask error model. In one embodiment, a method includes selecting a model of a lithography process including an optical model of an exposure tool and a resist model, creating an individual mask error model representing a mask manufactured using mask layout data, simulating the lithography process using the model of the lithography process and the individual mask error model to produce simulated patterns, determining differences between the simulated patterns and a design target, and optimizing settings of the exposure tool based on the differences between the simulated patterns and the design target.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: November 10, 2009
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Stefan Hunsche
  • Patent number: 7587704
    Abstract: Methods and systems are disclosed to inspect a manufactured lithographic mask, to extract physical mask data from mask inspection data, to determine systematic mask error data based on differences between the physical mask data and mask layout data, to generate systematic mask error parameters based on the systematic mask error data, to create an individual mask error model with systematic mask error parameters, to predict patterning performance of the lithographic process using a particular mask and/or a particular projection system, and to predict process corrections that optimize patterning performance and thus the final device yield.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: September 8, 2009
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Stefan Hunsche
  • Patent number: 7564017
    Abstract: While a high-resolution 2-dimensional image reconstruction is expected to give the maximum possible amount of information on the aerial image in a projection system, relevant information regarding image quality can be derived from a statistical evaluation of image values. Relevant statistical image data can be derived by sampling at a multitude of non-adjacent locations across a large area, rather than by scanning over many adjacent locations on a small area. Examples of the benefits of the present invention include: (1) it generally does not rely on very precise, repeatable fine alignment of the image sensor array with respect to the mask and/or the projected image; (2) a large number of individual sensor elements are utilized, and image data is generated from a large set of signal values; and (3) it can generate relevant data to assess aerial image quality in a very short data acquisition time.
    Type: Grant
    Filed: May 19, 2006
    Date of Patent: July 21, 2009
    Assignee: BRION Technologies, Inc.
    Inventors: Stefan Hunsche, Jun Ye
  • Patent number: 7558419
    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for inspecting integrated circuits, including, for example, patterns projected, provided or formed on a wafer using photomasks, or patterns on the photomask itself. The inspection system and technique of this aspect includes first identifying, determining and/or detecting areas and/or patterns that are potentially defective by removing, filtering and/or eliminating from a set of potential defects any and/or all typical, regular or normal patterns. The identification, determination and/or detection of potential defects may be performed relatively quickly by a rapidly executing algorithm. In this way, a first or “coarse” analysis is performed rapidly and some, many, all or substantially all of the regular, normal or typical patterns are eliminated from further analysis. Thereafter, a second more detailed analysis is performed.
    Type: Grant
    Filed: August 12, 2004
    Date of Patent: July 7, 2009
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Yu Cao, R. Fabian Pease
  • Patent number: 7488933
    Abstract: A method for separately calibrating an optical model and a resist model of lithography process using information derived from in-situ aerial image measurements to improve the calibration of both the optical model and the resist model components of the lithography simulation model. Aerial images produced by an exposure tool are measured using an image sensor array loaded into the exposure tool. Multiple embodiments of measuring aerial image information and using the measured aerial image information to calibrate the optical model and the resist model are disclosed. The method of the invention creates more accurate and separable optical and resist models, leading to better predictability of the pattern transfer process from mask to wafer, more accurate verification of circuit patterns and how they will actually print in production, and more accurate model-based process control in the wafer fabrication facility.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: February 10, 2009
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Yu Cao, Guangqing Chen, Stefan Hunsche
  • Patent number: 7233874
    Abstract: In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter.
    Type: Grant
    Filed: January 24, 2005
    Date of Patent: June 19, 2007
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Xun Chen
  • Patent number: 7171334
    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for autonomously monitoring fabrication equipment, for example, integrated circuit fabrication equipment. In one embodiment of this aspect of the invention, the present invention is an autonomous monitoring device including one or more event sensors (for example, acceleration, motion, velocity and/or inertial sensing device(s)) to detect a predetermined event of or by the fabrication equipment (for example, an event that is indicative of the onset, commencement, initiation and/or launch of fabrication process or sub-processes of or by the fabrication equipment). In response thereto, one or more process parameter sensors sample, sense, detect, characterize, analyze and/or inspect one or more parameters of the process in real time (i.e., during the fabrication process).
    Type: Grant
    Filed: June 1, 2004
    Date of Patent: January 30, 2007
    Assignee: Brion Technologies, Inc.
    Inventor: Michael J. Gassner
  • Patent number: 7120895
    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
    Type: Grant
    Filed: March 18, 2005
    Date of Patent: October 10, 2006
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Yen-Wen Lu, Yu Cao, Luoqi Chen, Xun Chen
  • Patent number: 7117478
    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
    Type: Grant
    Filed: January 18, 2005
    Date of Patent: October 3, 2006
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Yen-Wen Lu, Yu Cao, Luoqi Chen, Xun Chen
  • Patent number: 7114145
    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
    Type: Grant
    Filed: November 16, 2004
    Date of Patent: September 26, 2006
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Yen-Wen Lu, Yu Cao, Luoqi Chen, Xun Chen
  • Patent number: 7111277
    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: September 19, 2006
    Assignee: Brion Technologies, Inc.
    Inventors: Jun Ye, Yen-Wen Lu, Yu Cao, Luoqi Chen, Xun Chen