Abstract: A enhanced DLL includes a delay chain, a phase detector and a delay control unit. The delay chain is arranged to delay a reference clock signal to generate a delayed reference clock signal and reflect the delay control setting on the delayed reference clock signal, wherein the delay chain is periodically reset according to a period of the reference clock signal. The phase detector is coupled to the delay chain, and arranged to detect a phase shift between the delayed reference clock signal and the reference clock signal, thereby to generate a control value. The delay control unit is coupled to the delay chain and the phase detector, and arranged to adjust the delay control setting based on the control value.

Abstract: A resistive random access memory device includes: a first control line, a second control line, a RRAM cell, a first programmable current source and a first programmable voltage source. The RRAM cell is coupled between the first control line and the second control line, and has a programmable resistive element. The first programmable current source is coupled to the first control line, and for selectively providing a configuration current to the RRAM cell. The first programmable voltage source is coupled to the first control line, and for selectively providing a configuration voltage to the RRAM cell. Additionally, a state of the programmable resistive element of the RRAM cell is configured according to the configuration current and the configuration voltage. Under architecture of the RRAM cell of the present invention, a reading circuit for the RRAM device can be implemented with a simple inverter instead of a complicated current sensing amplifier.