Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGa1-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: Techniques for acquiring and processing data in combination with a photonic sensor system-on-a-chip (SoC) (1) to provide real-time calibrated concentration levels of an analyte (e.g., a constituent molecule within a biological substance) are described. A raw signal (1300) to be analyzed is collected by the sensor chip (1) via diffuse reflectance or transmittance. Determination of the analyte concentration is based on, in part, Beer-Lambert principles and facilitated by applying (2240) scattering correction to the raw signal (1300) prior to decomposition and analysis thereof.

Abstract: A solid-state device, and use and formation thereof. The device includes a light emitter (102) that emits light with abeam propagation direction and includes an emitter epitaxial layer stack (940); a light routing medium (103) in optical communication with the light emitter; and a light detector (104) in optical communication with the light routing medium, which detects light emitted by the light emitter and includes a detector epitaxial stack (945). The light emitter and detector are monolithically formed on a semiconductor substrate. The emitter and detector epitaxial layer stacks include different pluralities of layers of a single epitaxial layer stack. The beam propagation direction is either in-plane with the single epitaxial layer stack and the light detector detects light out of plane with the single epitaxial layer stack, or out of plane with the single epitaxial layer stack and the light detector detects light in plane with the single epitaxial layer stack.

Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing.

Abstract: Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep.

Abstract: Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep.