Patents Assigned to BROOKMAN TECHNOLOGY, INC.
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Publication number: 20220146684Abstract: A light source unit that emits a light pulse, a light receiving unit that includes pixels each including a photoelectric conversion device generating electric charge according to incident light and a plurality of electric charge accumulating units accumulating the electric charge and a pixel driving circuit that distributes the electric charge to the electric charge accumulating units of the pixels to be accumulated therein at a predetermined accumulation timing synchronized with the emission of the light pulse, and a distance image processing unit that measures the distance to a subject present in the measurement space on the basis of amounts of electric charge accumulated in the electric charge accumulating units are included, and the distance image processing unit includes a timing control unit that controls the accumulation timing in accordance with a measurement mode set in advance in accordance with a range of distances that are measurement targets.Type: ApplicationFiled: January 27, 2022Publication date: May 12, 2022Applicants: BROOKMAN TECHNOLOGY, INC., TOPPAN INC.Inventors: Tomoyuki AKAHORI, Yu OOKUBO, Kunihiro HATAKEYAMA, Satoshi TAKAHASHI
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Publication number: 20210270968Abstract: A range-measuring device encompasses a light emitter, a light-receiving region for receiving a reflected light of the pulsed light from the target, a driver for transmitting control signals to the light emitter and for transmitting transfer signals to distributing gates, providing offset periods in between on-periods of the transfer signals, distributing gates distribute signal charges to charge-accumulation regions, a range calculator configured to calculate ranges to the target, by using the signals transmitted from the charge-accumulation regions, and a control processor configured to generate control signals for controlling operations of the driver from calculated result delivered from the range calculator, and to transmit the control signals to the driver.Type: ApplicationFiled: December 31, 2020Publication date: September 2, 2021Applicant: BROOKMAN TECHNOLOGY, INC.Inventor: Masanori NAGASE
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Publication number: 20210255286Abstract: A range-measuring device encompasses N charge-distributing gates configured to distribute the signal charges toward N charge-transfer routes, a charge-exhausting gate for exhausting unwanted charges other than the signal charges, N charge-accumulation regions for accumulating the signal charges, a driver for transmitting drive signals to the N charge-distributing gates and the charge-exhausting gate, a readout-amplifier for reading out output signals corresponding to the signal charges accumulated in the N charge-accumulation regions, an arithmetic logic circuit configured to execute a job for calculating ranges to the target after receiving the output signals transmitted through the readout-amplifier.Type: ApplicationFiled: April 12, 2021Publication date: August 19, 2021Applicant: Brookman Technology, Inc.Inventor: Masanori NAGASE
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Patent number: 10652488Abstract: An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n+-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.Type: GrantFiled: March 30, 2018Date of Patent: May 12, 2020Assignees: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCYInventors: Takashi Watanabe, Osamu Ozawa, Kunihiko Tsuchiya, Tomoaki Takeuchi
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Publication number: 20180302581Abstract: An optical-detection element includes a p-type supporting-layer, an n-type buried charge-generation region to implement a photodiode with the supporting-layer, a p-type shield region buried in the buried charge-generation region, a gate insulating-film contacted with the shield region, a transparent electrode on the gate insulating-film, a p-type well region buried in the supporting-layer, and an n+-type charge-readout region buried in the supporting-layer at an edge of the well region toward the buried charge-generation region.Type: ApplicationFiled: March 30, 2018Publication date: October 18, 2018Applicants: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCYInventors: Takashi Watanabe, Osamu Ozawa, Kunihiko Tsuchiya, Tomoaki Takeuchi
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Patent number: 9923006Abstract: A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.Type: GrantFiled: January 23, 2017Date of Patent: March 20, 2018Assignees: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCYInventors: Takashi Watanabe, Tomohiro Kamiyanagi, Kunihiko Tsuchiya, Tomoaki Takeuchi
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Publication number: 20170133419Abstract: A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.Type: ApplicationFiled: January 23, 2017Publication date: May 11, 2017Applicants: BROOKMAN TECHNOLOGY, INC., IKEGAMI TSUSHINKI CO., LTD., JAPAN ATOMIC ENERGY AGENCYInventors: Takashi WATANABE, Tomohiro KAMIYANAGI, Kunihiko TSUCHIYA, Tomoaki TAKEUCHI