Abstract: A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.

Abstract: A pixelated sensor comprises a semiconductor substrate chip with a plurality of sensor pixels and a detector chip with a plurality of detector pixels. Each of the sensor pixels is configured as a photodiode and is electrically connected to an input node of one of the detector pixels. The detector pixels are further configured to convert and output the sensor input to an analog to digital converter. The detector chip further comprises first and second macropixels and a plurality of second macropixels, wherein each first macropixel is formed by subset of detector pixels switchably interconnected via a first conducting grid and wherein each second macropixel is formed by a subset of first macropixels switchably interconnected via a second conducting grid.

Abstract: The invention relates to a measuring device for a scanning probe microscope that includes a sample receptacle which is configured to receive a measurement sample to be examined, a measuring probe which is arranged on a probe holder and has a probe tip with which the measurement sample can be measured. A displacement device is configured to move the measuring probe and the sample receptacle relative to each other, in order to measure the measurement sample, such that the measuring probe, in order to measure the measurement sample, executes a raster movement relative to said measurement sample in at least one spatial direction. Movement measurement signals indicating a first movement component in a first spatial direction that disrupts the raster movement and a second movement component in a second spatial direction that disrupts the raster movement, which second spatial direction extends transversely to the first spatial direction.

Abstract: A method comprises the steps of: (a) Obtaining a measured X-ray spectrum for the coated sample, for determining characteristics for the sample and for a coating material; (b) Determining a simulated X-ray spectrum for the sample based on an initial sample composition; (c) Determining an adapted sample composition that improves a match between the characteristics of the sample and an adapted simulated X ray spectrum; (d) Determining an adapted coating thickness for the coating material based on the adapted sample composition and characteristics of the coating; and (e) Repeating the steps (b) to (d) using the adapted sample composition and the adapted coating thickness of the coating material instead of the initial values, wherein the coating thickness is used for determining an absorption of X-rays.

Abstract: A method for improving the quality/integrity of an EBSD/TKD map, wherein each data point is assigned to a corresponding grid point of a sample grid and represents crystal information based on a Kikuchi pattern detected for the grid point; comprising determining a defective data point of the EBSD/TKD map and a plurality of non-defective neighboring data points, comparing the position of Kikuchi bands of a Kikuchi pattern detected for a grid point corresponding to the defective data point with the positions of bands in at least one simulated Kikuchi pattern corresponding to crystal information of the neighboring data points and assigning the defective data point the crystal information of one of the plurality of neighboring data point based on the comparison.

Abstract: A detector for Kikuchi diffraction comprising a detector body and a detector head mountable to each other. The detector body comprises a body part which is enclosing a photodetector configured for detecting incident radiation and further comprises a vacuum window arranged upstream the photodetector with respect to a propagation direction of the incident radiation, a first body mounting portion configured to be mounted to a SEM chamber port and a second body mounting portion. The detector head comprises a scintillation screen and a head mounting portion configured to be mounted to the second body mounting portion.

Abstract: The present invention refers to a method for improving a Transmission Kikuchi Diffraction, TKD pattern, wherein the method comprises the steps of: Detecting a TKD pattern (20b) of a sample (12) in an electron microscope (60) comprising at least one active electron lens (61) focusing an electron beam (80) in z-direction on a sample (12) positioned in distance D below the electron lens (61), the detected TKD (20b) pattern comprising a plurality of image points xD, yD and mapping each of the detected image points xD, yD to an image point of an improved TKD pattern (20a) with the coordinates x0, y0 by using and inverting generalized terms of the form xD=?*A+(1??)*B and yD=?*C+(1??)*D wherein ? = Z D with Z being an extension in the z-direction of a cylindrically symmetric magnetic field BZ of the electron lens (61), and wherein A, B, C, D are trigonometric expressions depending on the coordinates x0, y0, with B and D defining a rotation around a symmetry axis of the magnetic field BZ, and with A and C d

Abstract: A measuring device for a scanning probe microscope including a sample receptacle configured to receive a sample; a measuring probe which is arranged on a probe holder and has a probe tip; a displacement device which moves the measuring probe and the sample receptacle relative to each other; a control device which is connected to the displacement device and controls the relative movement between the measuring probe and the sample receptacle; and a sensor device which is configured to detect, movement measurement signals during an absolute measurement for a movement of the measuring probe and/or a movement of the sample receptacle. The movement measurement signals are relayed to the control device. The control device is configured to control the relative movement. The invention also provides a scanning probe microscope, as well as a method for examining a sample.

Abstract: A pixelated sensor comprises a semiconductor substrate chip with a plurality of sensor pixels and a detector chip with a plurality of detector pixels. Each of the sensor pixels is configured as a photodiode and is electrically connected to an input node of one of the detector pixels. The detector pixels are further configured to convert and output the sensor input to an analog to digital converter. The detector chip further comprises first and second macropixels and a plurality of second macropixels, wherein each first macropixel is formed by subset of detector pixels switchably interconnected via a first conducting grid and wherein each second macropixel is formed by a subset of first macropixels switchably interconnected via a second conducting grid.

Abstract: The present invention refers to an apparatus (100) and a method for detecting characteristics of a probe. In an embodiment, the apparatus (100) comprises a vacuum chamber (104) and a beam generator (102) adapted to generate a beam of charged particles within the vacuum chamber (104). When the beam of charged particles falls onto the probe, interaction particles and/or interaction radiation are generated. The apparatus (100) further comprises an electromechanical unit (114) within the vacuum chamber (104) and a detector (110) comprising a plurality of detection units and being arranged on the electromechanical unit (114) allowing for the detector (110) to move from a first position (302) with respect to the beam generator (102) to a second position (304) with respect to the beam generator (102) and vice versa, upon a corresponding actuation of the electromechanical unit (114) performable from outside of the vacuum chamber (104).

Abstract: A method comprises the steps of: (a) Obtaining a measured X-ray spectrum for the coated sample, for determining characteristics for the sample and for a coating material; (b) Determining a simulated X-ray spectrum for the sample based on an initial sample composition; (c) Determining an adapted sample composition that improves a match between the characteristics of the sample and an adapted simulated X ray spectrum; (d) Determining an adapted coating thickness for the coating material based on the adapted sample composition and characteristics of the coating; and (e) Repeating the steps (b) to (d) using the adapted sample composition and the adapted coating thickness of the coating material instead of the initial values, wherein the coating thickness is used for determining an absorption of X-rays.

Abstract: The present invention relates to an X-ray fluorescence, XRF, spectrometer, for measuring X-ray fluorescence emitted by a target, wherein the XRF spectrometer comprises an X-ray tube with an anode to emit a divergent X-ray beam, a capillary lens that is configured to focus the divergent X-ray beam on the target, an aperture system that is positioned between the anode of the X-ray tube and the capillary lens and comprises at least one pinhole, and a detector that is configured for detecting X-ray fluorescence radiation emitted by the target, wherein the at least one pinhole is configured for being inserted into the divergent X-ray beam and for reducing a beam cross section of the divergent X-ray beam between the anode and the capillary lens. The present invention further relates to an aperture system for a spectrometer, to the use of an aperture system for adjusting the focal depth of a spectrometer and to a method for adjusting the focal depth of as spectrometer.

Abstract: A detector for Kikuchi diffraction comprising a detector body and a detector head mountable to each other. The detector body comprises a body part which is enclosing a photodetector configured for detecting incident radiation and further comprises a vacuum window arranged upstream the photodetector with respect to a propagation direction of the incident radiation, a first body mounting portion configured to be mounted to a SEM chamber port and a second body mounting portion. The detector head comprises a scintillation screen and a head mounting portion configured to be mounted to the second body mounting portion.

Abstract: The invention relates to a measuring device for a scanning probe microscope including a measuring probe a first probe holding device on which the measuring probe is arranged, a detection device including a measurement light source which is adapted to provide light beams directed toward the measuring probe, a sensor device which is adapted, during the operation to receive measurement light beams reflected from the measuring probe.

Abstract: The invention relates to a photon detector (10), in particular an x-ray detector, in the form of a measurement finger, which extends along a detector axis (23) and has a detector head (11) at a first end of the measurement finger, wherein the detector head (11) comprises a plurality of at least two detector modules (22), each comprising a sensor chip (12) sensitive to photon radiation (14), in particular x-radiation, said sensor chip having an exposed end face (13) and a face facing away from the end face (13), wherein the detector modules (22) are arranged around the detector axis (23) in a plane (24) extending orthogonally to the detector axis (23).

Abstract: Methods and arrangements identify crystalline phases in a polycrystalline sample by determining a normalized vector p(i) for the chemical composition of the expected crystal structure, at each measurement point of the sample, recording a spectrum by means of energy-dispersive X-ray spectroscopy and determining the chemical composition, and recording an electron diffraction image and determining of the diffraction bands. The methods and arrangements also determine a normalized vector v for the chemical composition, compare the normalized vector v with each of the normalized vectors p(i) of the expected crystal structures and outputting an evaluation factor s(i) for the similarity of the vectors in each case, compare the diffraction bands with those of the expected crystal structures and outputting an evaluation factor n(i), and determining an overall quality from the two evaluation factors and identifying the crystal structure with the highest overall quality as belonging to the measurement point.

Abstract: The invention relates to a device (98) for the spatial alignment of X-ray optics (100) with an entry point (104) and an exit point (108). The device (98) comprises a parallel displacement mechanism (200) for gauging the entry point (104) of the X-ray optics (100) to a first predetermined point (100) by parallel displacement of the X-ray optics (100). Further, the device (98) comprises a goniometer mechanism (300) for gauging the exit point (108) of the X-ray optics (100) to a second predetermined point (106) by at least approximate pivoting of the X-ray optics (100) around the entry point (104). Further, the invention relates to an apparatus (96) which comprises the device (98) and X-ray optics (100).

Abstract: The invention relates to a photon detector (10), in particular an x-ray detector, in the form of a measurement finger, which extends along a detector axis (23) and has a detector head (11) at a first end of the measurement finger, wherein the detector head (11) comprises a plurality of at least two detector modules (22), each comprising a sensor chip (12) sensitive to photon radiation (14), in particular x-radiation, said sensor chip having an exposed end face (13) and a face facing away from the end face (13), wherein the detector modules (22) are arranged around the detector axis (23) in a plane (24) extending orthogonally to the detector axis (23).

Abstract: A method for identifying crystalline phases in a polycrystalline sample, comprising: determining a normalized vector p(i) for the chemical composition of the expected crystal structure, at each measurement point of the sample, recording a spectrum by means of energy-dispersive X-ray spectroscopy and determining the chemical composition, and recording an electron diffraction image and determining of the diffraction bands; determining a normalized vector v for the chemical composition, comparing the normalized vector v with each of the normalized vectors p(i) of the expected crystal structures and outputting an evaluation factor s(i) for the similarity of the vectors in each case; comparing the diffraction bands with those of the expected crystal structures and outputting an evaluation factor n(i) determining an overall quality from the two evaluation factors and identifying the crystal structure with the highest overall quality as belonging to the measurement point.

Abstract: A method for scanning a sample by means of X-ray optics for irradiating the sample with X-rays, comprises the following steps: (a) displacing a measuring point, defined by an optical exit point of the X-ray optics, in the sample in a first scanning direction by means of swiveling the X-ray optics about a first swivel axis; (b) detecting radiation emanating from the sample at, at least, two measuring points along the first scanning direction; (c) combining measured values correlating with the detected radiation to form an overall scan.