Abstract: A method for manufacturing an aluminum nitride particle includes the steps of wet-milling an aluminum nitride material to form a solution containing aluminum nitride powders; blending a binding agent and a dispersing agent with the solution to gain a slurry; and granulating the slurry to obtain the aluminum nitride particle.

Abstract: A cell has a substrate, a first microstructure and an active layer. The first microstructure is formed on the substrate and has therein a first material with a concentration gradient toward one side of the substrate to provide a first built-in electric field. The active layer is mounted on the first microstructure so as to reduce recombination of electrons and holes in the cell.

Abstract: A solar cell includes a substrate; multiple silicon rods formed on a surface of the substrate; an insulator layer formed on the surface of the substrate while the silicon rods are still exposed; a silicon shell layer formed on outside of each of the silicon rods; and a InxGa1?xAsyP1?y layer formed on the silicon shell layer to form a first cell, wherein 0?x?1 and 0?y?1.

Abstract: A method for preparing an ester is provided. The method includes steps of mixing an acid and an alcohol in a reactive distillation column to generate a first gas mixture; transporting the first gas mixture out of the reactive distillation column; cooling down the first gas mixture for a phase separation to obtain a first liquid mixture in an upper phase; transporting the first liquid mixture back to the reactive distillation column; obtaining a second liquid mixture at a middle section of the reactive distillation column; transporting the second liquid mixture to a separative distillation column; and obtaining the ester at a bottom section of the separative distillation column.

Abstract: A method for forming a silicon film having a microcrystal structure is provided. The method includes following steps. A plasma-enhanced chemical vapor deposition system having a reaction chamber, a top electrode and a bottom electrode is provided. The top electrode and the bottom electrode are opposite and disposed in the reaction chamber. A substrate is disposed on the bottom electrode. A silane gas is applied into the reaction chamber. A silicon film having a microcrystal structure is formed by simultaneously irradiating the silane gas in the reaction chamber by a carbon dioxide laser and performing a plasma-enhanced chemical vapor deposition step.