Abstract: A method, a system, and a computer program product are provided for determining points of interest using intelligent agents and semantic data. The method is implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions operable for receiving a media data comprising a location data comprising where media was captured. The instructions are also operable for determining at least one point of interest based on the media data, tying the media data to the at least one point of interest, and providing the media data tied to the at least one point of interest to an end user.

Abstract: A memory module determines that the memory module is connected to a memory module connector. The memory module receives the connector ID from the connector and communicates, to the connector, a memory module ID associated with the memory module. A connector-module ID token is generated using the connector ID and the memory module ID. It is determined that the connector-module ID token was not received from the connector within a predetermined time window. Data on the memory module is erased in response to not receiving the connector-module ID.

Abstract: A method for preventing epitaxial growth in a semiconductor device is described. The method cuts the fins of a FinFET structure to form a set of exposed fin ends. A plasma nitridation process is performed to the set of exposed fin ends. The plasma nitridation process forms a set of nitride layer covered fin ends. Dielectric material is deposited over the FinFET structure. The dielectric is etched to reveal sidewalls of the fins and the set of nitride layer covered fin ends. The nitride layer prevents epitaxial growth at the set of spacer covered fin ends.

Abstract: A session key is negotiated to secure a user session executed in a host computer. An electronic hardware security module (HSM) located in the host computer generates a first session key. A smart card generates a second session key that matches the first session key. An encrypted copy of the second session key is communicated to an electronic host application module installed in the host computer. The electronic host application module decrypts the encrypted session key to obtain a copy of the session key such that the first and second session keys possessed by the smart card, the host application module and the HSM match one another.

Abstract: A quarter product code codeword includes various R code symbols and C code symbols each including a plurality of symbols. Each symbol is loaded into a diagonal anti-diagonal structure in two unique locations. To provide for fast loading, the symbols may be shifted by one or more shift registers associated with the diagonal or anti-diagonal structure. The two locations at which each symbol is positioned are included within different diagonals or anti-diagonals making it possible to load or unload either symbol or multiple symbols in a single clock cycle. Further, by partitioning the diagonal anti-diagonal structure, multiple respective symbols or plurality of symbols may be loaded or unloaded in a single clock cycle.

Abstract: A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion of a first transistor; forming a second silicon germanium layer on the substrate adjacent to the first silicon germanium layer, the second silicon germanium layer forming a portion of a second transistor and having a germanium content that is different than the first silicon germanium layer and a thickness that is substantially the same; growing by an epitaxial process a compressively strained silicon germanium layer on the first silicon germanium layer, and a tensile strained silicon germanium layer on the second silicon germanium layer; patterning a first fin in the compressively strained silicon germanium layer and the first silicon germanium layer; and patterning a second fin in the tensile strained silicon germanium layer and the second silicon germanium layer.

Abstract: Examples of techniques for encoding data in a 2D symbology are disclosed. In one example implementation according to aspects of the present disclosure, a computer-implemented comprises assigning a first color representative of a 0-bit and a second color representative of a 1-bit. The method further comprises designating a starting cell pair and an ending cell pair. The method also comprises generating, by a processing device, the 2D symbology. The 2D symbology comprises a series of cells in a cell space starting with the starting cell pair and ending with the ending cell pair. Each cell between the starting cell pair and the ending cell pair corresponds to a bit of a binary string and has a common cell length. The cells corresponding to a 0-bit are colored the first color and the cells corresponding to a 1-bit are colored the second color.

Abstract: A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are present on a fin structure, wherein an upper surface of the first spacers is offset from an upper surface of the replacement gate structure, and forming at least second spacers on the first spacers and the exposed surfaces of the replacement gate structure. The method may further include substituting the replacement gate structure with a functional gate structure having a first width portion in a first space between adjacent first spacers, and a second width portion having a second width in a second space between adjacent second spacers, wherein the second width is greater than the first width.

Abstract: A semiconductor structure including vertical transistors is provided in which a sigma shaped source/drain extension region is formed between a top faceted surface of a first region of an epitaxial semiconductor channel material and a bottom faceted surface of a second region of the epitaxial semiconductor channel material. The sigma shaped source/drain extension region is formed after formation of a functional gate structure on each side of an epitaxial semiconductor channel material by first removing a sacrificial bottom spacer layer of a bottom spacer material stack, performing a sigma etch on an exposed lower portion of the epitaxial semiconductor channel material to provide the first region of epitaxial semiconductor channel material and the second region of the epitaxial semiconductor channel material, and then epitaxially growing the sigma shaped source/drain extension region from the faceted surfaces of the first and second regions of epitaxial semiconductor channel material.

Abstract: Embodiments of the present invention disclose a method for providing a technical solution for model driven development. Program code is analyzed to determine the execution sequence of states of the program code. The program code is generated by performing a first transformation to a model. The model includes an abstract description of a business implemented by the program code. At least part of the statement of the program code is grouped into functional blocks. A visual representation of the program code is created. The visual representation is based on the execution sequence and the functional blocks. A code snipped is determined to be preserved in the program code based on a user's annotation of the visual representation. The code snippety is to be preserved in new program code generated by performing a second transformation to the model. The second transformation is executed after the first transformation.

Abstract: In one aspect of the invention, a method for fabricating an advanced metal conductor structure includes a conductive line pattern including a set of conductive line trenches in a dielectric layer. Each conductive line trench of the conductive line pattern has parallel vertical sidewalls and a horizontal bottom. A surface treatment of the dielectric layer is performed. The surface treatment produces an element enriched surface layer in which a concentration of a selected element in a surface portion of the parallel sidewalls and horizontal bottoms of the conductive line trenches is increased. A first metal layer of a first metal having a first conductivity is deposited on the element enriched surface layer.

Abstract: A computer processor determines a first span of a communication, wherein a span includes content associated with one or more dialog statements. If the content of the first span contains one or more topic change indicators which are identified by at least one detector of a learning model, the computer processor, in response, generates scores for each of the one or more indicators. The computer processor aggregates scores of the one or more indicators of the first span, which may be weighted, to produce an aggregate score. The computer processor compares the aggregate score to a threshold value, wherein the threshold value is determined during training of the learning model, and the computer processor, in response to the aggregate score crossing the threshold value, determines a topic change has occurred within the first span.

Abstract: In an approach to determine a sentiment of an attendee of a video conference, the computer receives a video of an attendee of a video conference and, then, determines, based, at least in part, on the video of the attendee, a first sentiment of the attendee. Furthermore, in the approach the computer receives an indication of an attendee activity on a first application and determines, based, in part, on the attendee activity whether the first sentiment of the attendee is related to the video conference.

Abstract: A system and method of implementing distributed transactions on a KVS having a simple configuration without unnecessarily causing rollbacks. The method includes providing a management map including a global transaction ID as a key and {a state of global transaction, a waiting global transaction ID list} as a value, starting a management local transaction on one of the plurality of servers, inserting a key-value pair including an ID of the global transaction to be processed as a key and {a state “working”, null} as a value into the management map in the management local transaction, and updating a value having the ID of the global transaction to be processed as a key to {a state “waiting”, a waiting global transaction ID list for the global transaction to be processed} on the management map in the management local transaction and committing the management local transaction.

Abstract: In a system and method, a design layout defines a transistor, a local layout effect (LLE)-inducing feature and shapes, including a non-uniform shape, that illustrate separation between the channel region and LLE-inducing feature. Layout information for the non-uniform shape, including minimum and maximum distances between the channel region and LLE-inducing feature, is extracted. Based on this layout information, a first width of a first portion of the non-uniform shape, which is associated with the maximum distance, and a second width of a second portion of the non-uniform shape, which is associated with the minimum distance, are derived and used to calculate the non-uniform shape's contribution to the value of a model parameter adjuster. The value of the model parameter adjuster is then calculated based on a sum of contributions from all shapes and used to generate a compact model for modeling a performance attribute of the transistor within the IC.

Abstract: A cognitive system that automatically assesses subjective answers may be provided. A cognitive engine executing on one or more processors may determine whether a statement parsed from a subjective answer by natural language processing technique is accurate or inaccurate, for each of the plurality of statements based on matching the statement with information associated with a domain of a question from a plurality of data sources, according to an accuracy threshold. An overall assessment of the answer may be automatically determined based on a number of statements determined to be accurate, a number of statements determined to be inaccurate, a number of duplicate statements in the answer relative to a total number of statements in the answer. A visual graphics representing accurate and inaccurate statements may be presented or displayed, allowing a user to interact with the visual graphics to modify the assessment.

Abstract: A method and system for coping with slice and dice operations in data warehouses is disclosed. An external approach may be utilized, creating queries using structured query language on a computer. An algorithm may be used to rewrite the queries. The resulting predicates may be joined to dimension tables corresponding to fact tables. An internal approach may be utilized, using aggregation functions with early aggregation for creating the queries. The results of the slice and dice operations may be outputted to a user on a computer monitor.

Abstract: A method, system and computer program product for utilizing email as a transport mechanism for activity stream posting. The method, program system, and computer product may include receiving an email, with content, at a target email system of a target from a source email system of a source. Content that is to be posted to an activity stream is extracted from the email content. The extracted content is posted to the activity stream. The method, program system, and computer product may further include examining the email at the target to identify whether the email includes content that is to be posted to the activity stream, or the target email system may deliver the email to a designated email address mailbox assigned to emails containing content to be sent to the activity stream. A notification of the email may be provided or the mailbox may be checked for email.

Abstract: A method of making a semiconductor device includes patterning a fin in a substrate; performing a first etching process to remove a portion of the fin to cut the fin into a first cut fin and a second cut fin, the first cut fin having a first fin end and a second fin end and the second cut fin having a first fin end and a second fin end; forming an oxide layer along an endwall of the first fin end and an endwall of the second fin end of the first cut fin, and an endwall of the first fin end and an endwall of the second fin end of the second cut fin; disposing a liner onto the oxide layer disposed onto the endwall of the first fin end of the first cut fin to form a bilayer liner; and performing a second etching process to remove a portion of the second cut fin.

Abstract: A technique for modifying an input/output (I/O) connection type between a client and a server includes determining, by the client, when at least partial storage access control for the client is to be migrated from a first virtualized I/O server to a second virtualized I/O server. An I/O connection type, from among multiple available I/O connection types available between the client and the second virtualized I/O server, is then selected by the client when the at least partial storage access control for the client is to be migrated. The selected I/O connection type is then communicated, by the client, to the second virtualized I/O server, which is configured to facilitate storage access for the client using the selected I/O connection type.