Patents Assigned to Byron Bong Siu
  • Patent number: 5094975
    Abstract: A thin, electrically insulating film is formed on a crystalline substrate and a multiplicity of holes are densely formed in the film. Conductive crystals are epitaxially grown on the substrate exposed in the holes, thereby forming on said substrate densely populated probes having sharp apices.
    Type: Grant
    Filed: May 16, 1989
    Date of Patent: March 10, 1992
    Assignees: Research Development Corporation, Byron Bong Siu
    Inventor: Bryon B. Siu