Patents Assigned to C. Itoh Fine Chemical Co., Ltd.
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Patent number: 5853817Abstract: The present invention provides a method for producing a a high-performance black matrix taking the palce of a Cr film black matrix and a high-performance color display thin film, which is comprises steps of vaporizing one or more organic pigments or vaporizing and exciting a metal or an alloy together with said organic pigments, and forming a thin film or a mixed composite thin film onto a substrate by the plasma exciting deposition.Type: GrantFiled: November 20, 1997Date of Patent: December 29, 1998Assignees: C. Itoh Fine Chemical Co., Ltd., Yoichi MurayamaInventor: Yoichi Murayama
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Patent number: 5474611Abstract: A plasma vapor deposition apparatus which can form high-quality films of ITO, for example, with high productivity, includes a vapor deposition chamber, a drive and a horizontally rotating circular holding plate connected to the drive located in a lower portion of the chamber, the circular holding plate having a circular vapor source material mounting centered at the rotational axis about which the plate is rotated by the drive, and coil-shaped electrodes for exciting vapor produced by evaporating the vapor source material. A film thickness correcting plate is interposed between the holding plate and the path along which the substrate is transported through the chamber by a transporting device. This plate is configured to so shield a portion of the substrate so that an excess of excited vapor particles do not accumulate at a given site on the surface of the substrate.Type: GrantFiled: August 22, 1994Date of Patent: December 12, 1995Assignees: Yoichi Murayama, Shincron Co., Ltd., C. Itoh Fine Chemical Co., Ltd.Inventors: Yoichi Murayama, Toshio Narita
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Patent number: 5384167Abstract: This invention provides a method for the surface treatment of a metal, which comprises the steps of: placing at least a surface to be treated of a metal to be treated between two electrodes facing each other under an atmosphere of a mixed gas consisting of an inert gas and a reactant gas; and plasma exciting said mixed gas under atmospheric pressure to effect glow discharge between said electrodes. The method of the present invention uses an apparatus simpler than that used in a conventional method and can inject into the surface layer of a metal, even those elements which have been difficult to with the conventional method, and can readily modify surface properties of a metal such as surface hardness, surface wettability, etc.Type: GrantFiled: March 15, 1993Date of Patent: January 24, 1995Assignees: E.C. Chemical Co., Ltd., C. Itoh Fine Chemical Co., Ltd., Atsushi NishiwakiInventors: Atsushi Nishiwaki, Norihito Ikemiya, Hiroshi Uchiyama, Hideo Inagaki, Yasuo Sawada, Kazumi Ogino
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Patent number: 5346728Abstract: The present invention has an object to ensure advanced use of plasma and obtain a plasma-treated reformed surface.In order to realize the objects above-mentioned, the present invention comprises the step of treating the surface of a macromolecular material with iodine plasma.Type: GrantFiled: March 31, 1993Date of Patent: September 13, 1994Assignees: C. Itoh Fine Chemical Co., Ltd., Yoichi Murayama, Yasuhiko YoshidaInventor: Yasuhiko Yoshida
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Patent number: 5258886Abstract: A thin film capacitor composed of a hybrid dielectric thin film that is sandwiched by a pair of electrodes. The hybrid dielectric thin film is obtained by complexing or accumulating first and second regions. The first region is derived from an ion plating source and the second region is derived from another ion plating source containing an auxiliary material to be coupled with the first region, both being obtained through an ion plating process. The use of the auxiliary material ensures a pinhole-free hybrid dielectric thin film.Type: GrantFiled: June 18, 1992Date of Patent: November 2, 1993Assignees: C. Itoh Fine Chemical Co., Ltd., Yoichi MurayamaInventors: Yoichi Murayama, Kunihiro Kashiwagi, Yasuhiko Yoshida
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Patent number: 5124173Abstract: According to this invention, there is provided an atmospheric pressure plasma surface treatment process comprising the steps of introducing a gas in a plasma reaction apparatus having a pair of dielectric-covered electrodes having opposing surfaces on at least one of which is provided with a solid dielectric; performing plasma excitation under atmospheric pressure; and surface treating an object placed between the opposing electrodes, wherein the gas introduced is a gaseous composition consisting essentially of argon, helium and/or ketone. This process makes it possible to quickly imparting hydrophilic nature to surfaces of an object made of a plastic to be treated. The hydrophilic nature given lasts long.Type: GrantFiled: July 17, 1991Date of Patent: June 23, 1992Assignees: E. C. Chemical Co., Ltd., C. Itoh Fine Chemical Co., Ltd., Satiko Okazaki, Masuhiro KogomaInventors: Hiroshi Uchiyama, Satiko Okazaki, Masuhiro Kogoma