Patents Assigned to CNRS (Centre National de la Recherche Scientifique)
  • Patent number: 11666599
    Abstract: The present invention relates to a novel pharmaceutical use of bromide, i.e. the treatment of autism spectral disorder (ASD).
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: June 6, 2023
    Assignees: INSERM, INTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE, INRA, INSTITUT NATIONAL DE LA RECHERCHE AGRONOMIQUE, CNRS, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE DE STRASBOURG
    Inventors: Sébastien Roux, Thierry Plouvier, Julie Le Merrer, Jérôme Becker
  • Patent number: 11559244
    Abstract: Disclosed is a method for the generation of a consciousness indicator for a non-communicating subject, including the steps of generating an auditory stimulation, receiving an electrocardiographic signal of the subject obtained from a recording during the generation of the auditory stimulation, extracting at least one feature from the electrocardiographic signal and deducing a consciousness indicator from an analysis of the electrocardiographic feature.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: January 24, 2023
    Assignees: ICM—INSTITUT DU CERVEAU ET DE LA MOELLE ÉPINIÈRE, INSERM (INSTITUT NATIONAL DE LA SANTÉ ET DE LA RECHERCHE MÉDICALE), CNRS (CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE), APHP, SORBONNE UNIVERSITÉ
    Inventors: Federico Raimondo, Jacobo D Sitt, Lionel Naccache, Diego Fernandez Slezak
  • Publication number: 20220275420
    Abstract: A biomass-based enzymatic biocathode based on glucose, monosaccharide, ketone or aldehyde includes a collector conductor support, conductive particles disposed on and bound to said collector conductor support, and an aldose reductase disposed on said conductive particles, being bound thereto by adsorption and accessible at the surface of the monosaccharide, ketone or aldehyde reagent that is to be reduced when the biocathode is operational.
    Type: Application
    Filed: July 27, 2020
    Publication date: September 1, 2022
    Applicants: UNIVERSITÉ GRENOBLE ALPES, INSTITUT NATIONAL DE LA SANTÉ ET DE LA RECHERCHE MEDICALE - INSERM, GRENOBLE INP (INSTITUT NATIONAL POLYTECHNIQUE), CNRS - CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Abdelkader ZEBDA, Philippe CINQUIN, Donald MARTIN, Thomas SORANZO
  • Publication number: 20220267289
    Abstract: A compound of formula (I): or pharmaceutically acceptable enantiomer, salt or solvate thereof, or a mixture thereof, the ring A, and the substituents Z, Y and R1 being as defined herein.
    Type: Application
    Filed: June 1, 2020
    Publication date: August 25, 2022
    Applicants: UNIVERSITE GRENOBLE ALPES, CNRS - CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE CLAUDE BERNARD LYON 1
    Inventors: Ahcène BOUMENDJEL, Pierre FALSON, Alexis MORENO, Basile PERES, Emile ROUSSEL
  • Patent number: 11313852
    Abstract: The invention relates to compounds which activate the BASIGIN signalling pathway, preferably agonists of BASIGIN, for the treatment of neurodegenerative disorders.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: April 26, 2022
    Assignees: INSERM Institut National de la Sante er de la Recherche Medicale, CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Ludivine Perrocheau, Alain Van Dorsselaer, Jose Alain Sahel, Thierry Leveillard
  • Publication number: 20210353439
    Abstract: Methods and systems are provided for decoding movement intentions using functional ultrasound (fUS) imaging of the brain. In one example, decoding movement intentions include determining a memory phase of a cognitive state of the brain, the memory phase between a gaze fixation phase and movement execution phase, and determining one or more movement intentions including one or more of intended effector (e.g., hand, eye) and intended direction (e.g., right, left) according to a machine learning algorithm trained to classify one or more movement intentions simultaneously.
    Type: Application
    Filed: May 12, 2021
    Publication date: November 18, 2021
    Applicants: California Institute of Technology, INSERM (Institut National de la Santé et de la Recherche Médicale), CNRS-CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Ecole Supérieure de Physique et de Chimie Industrielles de la Ville de Paris
    Inventors: Sumner L Norman, David Maresca, Vasileios Christopoulos, Mikhail Shapiro, Richard A. Andersen, Mickael Tanter, Charlie Demene
  • Patent number: 11123561
    Abstract: A treatment system for stimulating the vagus nerves is described, comprising the following elements: —a detection and control unit (20); —at least one detection probe (10d, 10g) connected to the detection and control unit and intended to be applied to at least one of the two vagus nerves of a patient; —means (24) provided in the detection and control unit for detecting a phenomenon of mass discharge of action potentials in at least one vagus nerve using the detection probe or detection probes; —stimulation probes (10d, 10g) for stimulating vagus nerves, and—means (24) provided in the detection and control unit that are capable, in response to the detection of a mass discharge, of applying predefined asymmetric stimulation signals to said stimulation probes capable of causing a depolarization and/or hyperpolarization of the vagus nerves and of blocking the conduction of the action potentials at least in the efferent direction.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: September 21, 2021
    Assignees: UNIVERSITE DE RENNES 1, INSERM (INSTITUT NATIONAL DE LA SANTE ET DE LA REC, CNRS (CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, CHU DE RENNES (CENTRE HOSPITALIER UNIVERSITAIRE DE
    Inventors: Alfredo Hernandez, Benoit Martin, Arnaud Biraben
  • Patent number: 10692718
    Abstract: A method for producing a network of nanostructures from at least one semiconductor material, including a step of forming nanostructures on the surface of a substrate, at least a part of the nanostructures having areas of contact between each other, comprising, in sequence and after the step of forming: a step of deoxidising the surface of the nanostructures and a step of reinforcing the bond between the nanostructures at the contact areas.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: June 23, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CNRS Centre National de la Recherche Scientifique, INSTITUT POLYTECHNIQUE DE GRENOBLE
    Inventors: Pauline Serre, Thierry Baron, Celine Ternon
  • Patent number: 10564084
    Abstract: Disclosed is a process and device allowing for fast measurements of the physicochemical properties of amphiphiles (lipids, surfactants, soaps, . . . ). A Marangoni flow is created and characterized using amphiphiles to be characterized. The observed flow is characterized, and using the disclosed process, one can deduce from this measurement many important physicochemical parameters of the amphiphiles such as their critical micellar concentration. Compared to existing techniques, the disclosed process offers the advantage that it requires a single experiment to deduce the parameters, when other techniques (pendant drop method, conductometry, etc . . . ) require the measurement of a quantity (interfacial tension, conductometry) against a systematically varied parameter (amphiphile concentration, . . . ). The disclosed process and devices are ideal to characterize and/or screen rapidly amphiphiles molecules based on their interaction with a solvent.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: February 18, 2020
    Assignees: THE TRUSTEES OF PRINCETON UNIVERSITY, CNRS-CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE DE RENNES I, CHANCELLOR, MASTERS & SCHOLARS OF UNIV. OF OXFORD
    Inventors: Matthieu Roche, Howard A. Stone, Isabelle Cantat, Arnaud Saint-Jalmes, Ian Griffiths, Sebastien Le Roux, Zhen Zhen Li
  • Patent number: 10465073
    Abstract: An organic dye for a dye-sensitized solar cell (DSSC) comprising at least one electron-acceptor unit and at least one ?-conjugated unit is described. Said organic dye is particularly useful in a dye-sensitized photoelectric transformation element which, in its turn, can be used in a dye-sensitized solar cell (DSSC).
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: November 5, 2019
    Assignees: ENI S.p.A., CNRS (CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE)
    Inventors: Paolo Biagini, Riccardo Po', Jean Roncali, Dora Demeter
  • Patent number: 10240123
    Abstract: The present invention relates to an ex vivo method for preparing induced paraxial mesoderm progenitor (iPAM) cells, said method comprising the step of culturing pluripotent cells in an appropriate culture medium comprising an effective amount of an activator of the Wnt signaling pathway and an effective amount of an inhibitor of the Bone Morphogenetic Protein (BMP) signaling pathway.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: March 26, 2019
    Assignees: INSERM (INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE), CNRS (CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE), UNIVERSITE DE STRASBOURG, ASSOCIATION FRANCAISE CONTRE LE MYOPATHIES
    Inventors: Olivier Pourquie, Jérôme Chal
  • Patent number: 9997299
    Abstract: Organic dye for a dye-sensitized solar cell (DSSC) comprising at least one electron-acceptor unit and at least one ?-conjugated unit. Said organic dye is particularly useful in a dye-sensitized photoelectric transformation element which, in its turn, can be used in a dye-sensitized solar cell (DSSC).
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: June 12, 2018
    Assignees: ENI S.p.A., CNRS (CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE)
    Inventors: Paolo Biagini, Jean Roncali, Dora Demeter, Philippe Leriche
  • Patent number: 9933302
    Abstract: An electronic circuit including a current conveyor connected to a load is provided. The load delivers at least one first voltage output and one second voltage output. Such a circuit is noteworthy in that the second voltage output has what is called a non-linear behavior relative to the magnitude of the input current of the electronic circuit in a given range.
    Type: Grant
    Filed: August 13, 2013
    Date of Patent: April 3, 2018
    Assignee: CNRS-CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventor: Christophe De La Taille
  • Publication number: 20180016579
    Abstract: The present invention relates to a method for treating a Leber congenital amaurosis in a patient harbouring the mutation c.2991+1655 A>G in the CEP290 gene, comprising the step of administering to said patient at least one antisense oligonucleotide complementary to nucleic acid sequence that is necessary for preventing splicing of the cryptic exon inserted into the mutant c.
    Type: Application
    Filed: August 31, 2017
    Publication date: January 18, 2018
    Applicants: INSERM (Institut National de la Sante et de la Rec herche Medicale), CNRS (Centre National de la Recherche Scientifique ), GENETHON, UNIVERSITE PARIS DESCARTES, ENSCP - Chimie ParisTech - Ecole Nationale Superie ure de Chimie de Paris, Universite d'Evry-Val-d'Essonne, ASSISTANCE PUBLIQUE HOPITAUX DE PARIS
    Inventors: Jean-Michel ROZET, Antoine KICHLER, Isabelle PERRAULT, Josseline KAPLAN, Xavier GERARD, Daniel SCHERMAN, M. Arnold MUNNICH
  • Patent number: 9777272
    Abstract: The present invention relates to a method for treating a Leber congenital amaurosis in a patient harboring the mutation c.2991+1655 A>G in the CEP290 gene, comprising the step of administering to said patient at least one antisense oligonucleotide complementary to nucleic acid sequence that is necessary for preventing splicing of the cryptic exon inserted into the mutant c.2291+1655 A>G CEP290 mRNA.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: October 3, 2017
    Assignees: INSERM (Institut National de la Sante et de la Recherche Medicale), CNRS (Centre National de la Recherche Scientifique), GENETHON, UNIVERSITE PARIS DESCARTES, ENSCP—Chimie ParisTech—Ecole Nationale Superieure de Chimie de Paris, Universite d'Evry-Val-d'Essonne, ASSISTANCE PUBLIQUE HOPITAUX DE PARIS
    Inventors: Jean-Michel Rozet, Antoine Kichler, Isabelle Perrault, Josseline Kaplan, Xavier Gerard, Daniel Scherman, M. Arnold Munnich
  • Patent number: 9583339
    Abstract: A method is provided for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, including forming a layer of nitride covering the gate; modifying the layer by plasma implantation of light ions, having an atomic number equal or less than 10, in the layer in order to form a modified layer of nitride, the modifying being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate; and removing the modified layer of nitride by a selective wet or dry etching, of the modified layer relative to said layer of semiconductor material and relative to the non-modified layer at the flanks of the gate, without etching the layer of semiconductor material, wherein an entire length of the non-modified layer at the flanks remains after the selective wet or dry etching.
    Type: Grant
    Filed: April 6, 2016
    Date of Patent: February 28, 2017
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CNRS-Centre National de la Recherche Scientifique, APPLIED MATERIALS, Inc.
    Inventors: Nicolas Posseme, Thibaut David, Olivier Joubert, Thorsten Lill, Srinivas Nemani, Laurent Vallier
  • Publication number: 20170044533
    Abstract: The present invention relates to a method for treating a Leber congenital amaurosis in a patient harbouring the mutation c.2991+1655 A>G in the CEP290 gene, comprising the step of administering to said patient at least one antisense oligonucleotide complementary to nucleic acid sequence that is necessary for preventing splicing of the cryptic exon inserted into the mutant c.
    Type: Application
    Filed: September 16, 2016
    Publication date: February 16, 2017
    Applicants: INSERM (Institut National de la Sante et de la Recherche Medicale), CNRS (Centre National de la Recherche Scientifique), GENETHON, UNIVERSITE PARIS DESCARTES, ENSCP - Chimie ParisTech - Ecole Nationale Superieure de Chimie de Paris, Universite d'Evry-Val-d'Essonne, ASSISTANCE PUBLIQUE HOPITAUX DE PARIS
    Inventors: Jean-Michel ROZET, Antoine KICHLER, Isabelle PERRAULT, Josseline KAPLAN, Xavier GERARD, Daniel SCHERMAN, M. Arnold MUNNICH
  • Patent number: 9487782
    Abstract: The present invention relates to a method for treating a Leber congenital amaurosis in a patient harboring the mutation c.2991+1655 A>G in the CEP290 gene, comprising the step of administering to said patient at least one antisense oligonucleotide complementary to nucleic acid sequence that is necessary for preventing splicing of the cryptic exon inserted into the mutant c.2291+1655 A>G CEP290 mRNA.
    Type: Grant
    Filed: November 18, 2014
    Date of Patent: November 8, 2016
    Assignees: INSERM (Institut National de la Sante et de la Recherche Medicale), CNRS (Centre National de la Recherche Scientifique), GENETHON, UNIVERSITE PARIS DESCARTES, ENSCP—Chimie ParisTech—Ecole Nationale Superieure de Chimie de Paris, Universite d'Evry-Val-d'Essonne, ASSISTANCE PUBLIQUE HOPITAUX DE PARIS
    Inventors: Jean-Michel Rozet, Antoine Kichler, Isabelle Perrault, Josseline Kaplan, Xavier Gerard, Daniel Scherman, M. Arnold Munnich
  • Patent number: 9481941
    Abstract: Embodiments of the present disclosure provide for methods for manufacturing a metallized or metallizable felt by percolation of at least one felt element by electrodeposition.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: November 1, 2016
    Assignees: UNIVERSITE DE RENNES, CNRS-CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Didier Floner, Florence Geneste, Dominique Paris, Olivier Lavastre
  • Publication number: 20160300709
    Abstract: A method is provided for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, including forming a layer of nitride covering the gate; modifying the layer by plasma implantation of light ions, having an atomic number equal or less than 10, in the layer in order to form a modified layer of nitride, the modifying being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate; and removing the modified layer of nitride by a selective wet or dry etching, of the modified layer relative to said layer of semiconductor material and relative to the non-modified layer at the flanks of the gate, without etching the layer of semiconductor material, wherein an entire length of the non-modified layer at the flanks remains after the selective wet or dry etching.
    Type: Application
    Filed: April 6, 2016
    Publication date: October 13, 2016
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CNRS Centre National de la Recherche Scientifique, APPLIED MATERIALS, Inc.
    Inventors: Nicolas POSSEME, Thibaut David, Olivier Joubert, Thorsten Lill, Srinivas Nemani, Laurent Vallier