Abstract: Disclosed herein is a device that includes: a first timing adjustment circuit generating a first control signal based on a command and an output buffer outputting a plurality of data sets in a serial at a timing based on the first control signal; and a second semiconductor chip including: a plurality of holding circuits holding the data sets in parallel, a second timing adjustment circuit generating a second control signal based on the command, and an input buffer sequentially capturing the data sets supplied from the holding circuits based on the second control signal.

Abstract: Disclosed herein is a semiconductor device that includes: an input node; an output node; a plurality of variable delay circuits connected in series between the input node and the output node; a control circuit that commonly controls delay amounts of the variable delay circuits based on phases of a first clock signal supplied to the input node and a second clock signal output from the output node; and a mixer circuit that generates a third clock signal based on any one of input clock signals respectively input to the variable delay circuits and any one of output clock signals respectively output from the variable delay circuits.

Abstract: A semiconductor device includes a semiconductor substrate having a first gate groove having first and second side walls facing to each other. A first gate insulating film covers the first and second side walls. A first gate electrode is disposed on the first gate insulating film and in a lower portion of the first gate groove. A first burying insulating film buries the first gate groove and covers the first gate electrode. A first diffusion region is adjacent to a first upper portion of the first gate insulating film. The first upper portion is positioned on an upper portion of the first side wall of the first gate groove. A second diffusion region is in contact with an upper portion of the second side wall of the first gate groove.