Patents Assigned to C/O ELPIDA MEMORY, INC.
  • Publication number: 20120132971
    Abstract: A semiconductor device includes a semiconductor substrate having a first gate groove having first and second side walls facing to each other. A first gate insulating film covers the first and second side walls. A first gate electrode is disposed on the first gate insulating film and in a lower portion of the first gate groove. A first burying insulating film buries the first gate groove and covers the first gate electrode. A first diffusion region is adjacent to a first upper portion of the first gate insulating film. The first upper portion is positioned on an upper portion of the first side wall of the first gate groove. A second diffusion region is in contact with an upper portion of the second side wall of the first gate groove.
    Type: Application
    Filed: November 30, 2011
    Publication date: May 31, 2012
    Applicant: C/O ELPIDA MEMORY, INC.
    Inventor: Noriaki MIKASA