Abstract: An object of this invention is to provide a sealing film for an organic EL element having excellent moisture resistance, due to the absence of pinholes. A sealing film of this invention is a sealing film for an organic EL element having a layered structure of at least three layers with a silicon nitride film and a silicon oxynitride film layered in alternation, and is characterized in that odd-numbered layers from the side of the organic EL element are silicon nitride films having a film thickness (T1) of 200 nm or greater, and even-numbered layers from the side of the organic EL element are silicon oxynitride films having a film thickness (T2) of 20 nm or greater and 50 nm or less.

Abstract: A semiconductor device and a method of forming thereof has a base body has a field stopping layer, a drift layer, a current spreading layer, a body region, and a source contact region layered in the order on a substrate. A trench that reaches the field stopping layer or the substrate is provided. A gate electrode is provided in the upper half section in the trench. In a section deeper than the position of the gate electrode in the trench, an insulator is buried that has a normal value of insulation breakdown electric field strength equal to or greater than the value of the insulation breakdown electric field strength of the semiconductor material of the base body. This inhibits short circuit between a gate and a drain due to insulation breakdown of an insulator film at the bottom of the trench to realize a high breakdown voltage in a semiconductor device using a semiconductor material such as SiC.

Abstract: A semiconductor device and a method of forming thereof have a semiconductor substrate, an active region, and an inclined trench formed around the outer periphery of the active region. The semiconductor substrate at least includes an n-type high impurity concentration layer inhibiting a depletion layer from spreading, an n-type low impurity concentration drift layer, and a p-type high impurity concentration layer forming a p-n main junction between the drift layer, which are arranged in this order. In the active region, an effective current flows in the direction of the thickness of the substrate. The inclined trench cuts the p-n main junction at a positive bevel angle from the semiconductor substrate surface on the side of the n-type high impurity concentration layer to penetrate through the substrate for separating it into chips.