Patents Assigned to CTech Corporation
  • Patent number: 7859824
    Abstract: A solid capacitor and the manufacturing method thereof are disclosed. The solid capacitor consists of a dielectric layer and two electrodes. A plurality of holes formed by an opening process is disposed on surface of the dielectric layer. The two electrodes connect with the dielectric layer by the holes. By means of a plurality of high temperature volatile matters, the plurality of holes is formed on surface of the dielectric layer during sintered process. The holes are connected with the outside so as to increase surface area of the dielectric layer and further the capacity is increased. And the solid capacitor stores charge by physical means. Moreover, the solid capacitor can be stacked repeatedly to become a multilayer capacitor.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: December 28, 2010
    Assignee: CTECH Corporation
    Inventors: Shang Mei Lee, Ting Keng Lin, Yung Sheng Huang
  • Patent number: 7848082
    Abstract: A solid capacitor and the manufacturing method thereof are disclosed. The solid capacitor consists of a dielectric layer and two electrodes. A plurality of holes formed by an opening process is disposed on surface of the dielectric layer. The two electrodes connect with the dielectric layer by the holes. By means of a plurality of high temperature volatile matters, the plurality of holes is formed on surface of the dielectric layer during sintered process. The holes are connected with the outside so as to increase surface area of the dielectric layer and further the capacity is increased. And the solid capacitor stores charge by physical means. Moreover, the solid capacitor can be stacked repeatedly to become a multilayer capacitor.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: December 7, 2010
    Assignee: CTech Corporation
    Inventors: Shang Mei Lee, Ting Keng Lin, Yung Sheng Huang
  • Patent number: 7706126
    Abstract: The method for manufacturing a supercapacitor according to the present invention includes the following steps. First, stack a bottom electrode plate and a top electrode plate in parallel. Then, install a first rubber frame and a second rubber frame face-to-face on the bottom and the top electrode plates. The first rubber frame is adapted with a first opening, while the second rubber frame is adapted with a second opening. Next, install an isolation membrane in a space surrounded by the first and the second rubber frames. Afterwards, bind the first and the second rubber frames. Then, produce vacuum in the space. Next, place the bottom and the top electrode plates into an electrolyte to make the electrolyte flow into the space. Finally, use a first resin to seal the first and the second openings. Thereby, the short-circuit phenomenon caused by long-term usage of the supercapacitor can be prevented.
    Type: Grant
    Filed: January 26, 2007
    Date of Patent: April 27, 2010
    Assignee: CTech Corporation
    Inventor: Yung Sheng Huang
  • Patent number: 7701697
    Abstract: The method for manufacturing a supercapacitor according to the present invention includes the following steps. First, stack a bottom electrode plate and a top electrode plate in parallel. Then, install a first rubber frame and a second rubber frame face-to-face on the bottom and the top electrode plates. The first rubber frame is adapted with a first opening, while the second rubber frame is adapted with a second opening. Next, install an isolation membrane in a space surrounded by the first and the second rubber frames. Afterwards, bind the first and the second rubber frames. Then, produce vacuum in the space. Next, place the bottom and the top electrode plates into an electrolyte to make the electrolyte flow into the space. Finally, use a first resin to seal the first and the second openings. Thereby, the short-circuit phenomenon caused by long-term usage of the supercapacitor can be prevented.
    Type: Grant
    Filed: October 17, 2008
    Date of Patent: April 20, 2010
    Assignee: CTech Corporation
    Inventor: Yung Sheng Huang
  • Patent number: 7495891
    Abstract: A solid capacitor and the manufacturing method thereof are disclosed. The solid capacitor consists of a dielectric layer and two electrodes. A plurality of holes formed by an opening process is disposed on surface of the dielectric layer. The two electrodes connect with the dielectric layer by the holes. By means of a plurality of high temperature volatile matters, the plurality of holes is formed on surface of the dielectric layer during sintered process. The holes are connected with the outside so as to increase surface area of the dielectric layer and further the capacity is increased. And the solid capacitor stores charge by physical means. Moreover, the solid capacitor can be stacked repeatedly to become a multilayer capacitor.
    Type: Grant
    Filed: November 16, 2005
    Date of Patent: February 24, 2009
    Assignee: Ctech Corporation
    Inventors: Shang Mei Lee, Ting Keng Lin, Yung Sheng Huang
  • Patent number: 7457104
    Abstract: A solid capacitor and the manufacturing method thereof are disclosed. The solid capacitor consists of a dielectric layer and two electrodes. A plurality of holes formed by an opening process is disposed on surface of the dielectric layer. The two electrodes connect with the dielectric layer by the holes. By means of a plurality of high temperature volatile matters, the plurality of holes is formed on surface of the dielectric layer during sintered process. The holes are connected with the outside so as to increase surface area of the dielectric layer and further the capacity is increased. And the solid capacitor stores charge by physical means. Moreover, the solid capacitor can be stacked repeatedly to become a multilayer capacitor.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: November 25, 2008
    Assignee: CTech Corporation
    Inventors: Shang Mei Lee, Ting Keng Lin, Yung Sheng Huang