Abstract: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises low average particle size (e.g., 30 nm or less) wet-process ceria abrasive particles, at least one alcohol amine, and water, wherein said polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.
Type:
Application
Filed:
October 10, 2013
Publication date:
April 16, 2015
Applicant:
Cabot Miroelectronics Corporation
Inventors:
Brian REISS, Jeffrey Dysard, Sairam Shekhar