Abstract: A method of manufacturing a semiconductor substrate having a deep junction, forming at least one p+ region (n+ region) on a front side of a p-type (n-type) high-resistance wafer; and forming at least one n+ region (p+ region) on a front side of a n-type (p-type) high-resistance wafer. The method further includes aligning the at least one p+ region (n+ region) on a front side of a p-type (n-type) high-resistance wafer with the at least one n+ region (p+ region) on a front side of a n-type (p-type) high-resistance wafer; and bonding the front sides of the high-resistance wafers to form a wafer assembly having at least one deep p-n junction at a depth of at least 1 micron from the backside of the n-type (p-type) high-resistance wafer.

Abstract: The instant disclosure is directed to passivated silver nanoparticle coatings and methods of making the same. A method may comprise obtaining a substrate having a surface, exposing the surface to a plurality of silver nanoparticles, applying a nucleating agent to the silver nanoparticles to form a plurality of silver cores, and passivating the silver cores by applying a sulfidation agent to the silver cores to form silver sulfide shells around the silver cores, thereby forming a coating comprising a plurality of sulfidated silver nanoparticles having a core-shell structure. The method may be used to form a coating comprising a plurality of sulfidated silver nanoparticles having a core-shell structure.

Abstract: Semiconductor devices comprising a semiconductor edge filter, a first light absorbing region overlying the semiconductor edge filter and a second light absorbing region underlying the semiconductor edge filter are disclosed. The semiconductor edge filter has a high reflectivity over a first wavelength range absorbed by the overlying light absorbing region and a high transmission over a second wavelength range absorbed by the underlying light absorbing region.