Abstract: A sensor circuit that is capable of sensing of neural action potentials is disclosed. The circuit can be designed to minimize power dissipation and total silicon area so that it can be incorporated into a massively parallel sensor array and ultimately implanted in the body (e.g. into the brain) in a safe manner. The circuit can also be designed to be tunable such that it can be optimized in silico prior to fabrication, and can be optimized through the use of controllable current sources after fabrication.

Abstract: An array of pixels for charge domain binning in a CMOS image sensor, to increase the readout sensitivity of such a sensor. The array of pixels comprises at least two pixels in a common substrate. At least one of said pixels is configured or configurable to function as a pixel of a first type with a first, higher, charge collecting capability, for collecting charges generated by radiation impinging on the substrate. At least another one of said pixels is configurable to function as pixel of a second type, with a second, reduced, charge collecting capability, and as a pixel of the first type.

Abstract: A pixel structure and a method of reading charges generated by a radiation sensing element upon exposure thereof to radiation is presented. The pixel structure comprises at least two capacitors configured for integrating charge from a radiation sensing element, where an overflow transistor sets a predetermined threshold level by a static voltage on its control electrode. This allows charges generated in the radiation sensing element to be integrated in either the first capacitor for a level of charge generated by the radiation sensing element, while the level remains under a predetermined threshold level, or in the at least one further capacitor for a level of charge generated by the radiation sensing element when said level surpasses said predetermined threshold level. At least one merge switch is used for merging the charges of the first capacitor with the charges of the at least one further capacitor.

Abstract: An imaging system for detecting one or more events in a pixel array. The imaging system comprises the pixel array and a processing area adjacent to the pixel array. The imaging system is configured to transfer the pixel information of a subgroup of pixels to the processing area and the processing area is configured to process the event information.

Abstract: A pixel element for an imaging sensor comprises a semiconductor substrate, a radiation-sensitive element configured to generate electric charges in response to incident radiation, a charge accumulation region provided in the semiconductor substrate configured to accumulate at least a portion of the electric charges, and an electrode arranged on the semiconductor substrate adjacent to the charge accumulation region. The electrode is electrically insulated from the semiconductor substrate such as to form an inversion region in the semiconductor substrate that connects to the charge accumulation region when a voltage is applied to said electrode.

Abstract: A stacked image sensor comprises an array of tiles, each comprising a sensor array layer tile comprising a plurality of sensing elements for receiving radiation, one or more electronics layer tiles comprising at least one read-out circuit, connected to at least one subgroup of sensing elements of the sensor array layer tile, a photonics layer tile comprising at least one waveguide and one or more modulators, each connected to the one or more electronics layer tiles. The modulators are adapted for modulating an optical signal travelling within the at least one waveguide. The electronics layer tile comprises at least one driver for driving an optical modulator in the photonics layer tile in accordance with the signals received in each sensing element of the sensor array layer tile. At least one of the layer tiles (sensor array layer, electronics layer and/or photonics layer tiles) is implemented in a single integrated circuit.

Abstract: The present invention provides a pixel circuit comprising a pinned photodiode, at least one first transfer gate for electrically connecting the pinned photodiode to at least one storage node and at least one further transfer gate. The at least one further gate can connect the at least one storage node with at least one floating diffusion node. At least one merging switch is included for allowing connection between the at least one floating diffusion node with one or more capacitor nodes, which can accept charge that exceeds the maximum storage capacity of the storage node.

Abstract: A method and device of driving a radiation sensor pixel is disclosed. The sensor pixel comprises a sensing element capable of charge generation as a response to impinging radiation, a floating diffusion node, a transfer gate between the sensing element and the floating diffusion node, and a charge storage device connected to the floating diffusion node via a switch. The method comprises biasing the transfer gate to three or more bias voltages OFF, ON and an intermediate bias between OFF and ON. During the period in which the transfer gate is biased to the intermediate bias, if the sensor reaches saturation, the overflown charges may be collected and part of them stored in the charge storage device, for further analysis and merging.

Abstract: A pixel circuit comprising a photodiode, a floating diffusion, a transfer gate for electrically connecting the photodiode to the floating diffusion, and a charge storage device, wherein the charge storage device comprises an electrode which is at least partly overlaying the photodiode, and which is configured and adapted to be driven so as to influence the total capacitance of the pixel.

Abstract: A CMOS image sensor having one or more pixels, e.g. in an array, whereby each of the pixels having two or more sub-pixel elements for generating charge according to incident light intensity as well as a common charge sensitive device such as an amplifier coupled to two or more sub-pixel elements of a respective pixel. Charges generated by the two or more sub-pixel elements are added and integrated over respective integration time periods, to provide a signal representing the integrated charges. The circuit can be configured so that the two or more sub-pixel elements have different integration time periods. By combining charges at the charge sensitive device rather than combining outputs of multiple such devices, the amount of read noise can be reduced.

Abstract: A pixel element for an image sensor comprises a semiconductor substrate; a radiation-sensitive element configured to generate electric charges in response to incident radiation, and provided with a charge accumulation region configured to accumulate at least a portion of said electric charges; a passive potential barrier region; and a capacitive element operably connected to the charge-accumulation region of the radiation-sensitive element via the passive potential barrier region, the passive potential barrier region being configured to conduct charges from said charge accumulation region to the capacitive element when at least a predetermined amount of electrical charge has accumulated in said charge accumulation region.

Abstract: The present invention provides an array of pixels for the detection of a flash of electromagnetic radiation or a cloud of impinging high energy particles. Each pixel in the array comprises a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, and a converter for converting the radiation signal into pulses. The array further comprises a circuit for comparing one or more of the criteria pulse amplitude, pulse arrival time, time to convert a pulse in a digital signal, pulse duration time, pulse rise and fall time or integral of pulse over time for pulses coinciding on pixels in a predetermined neighborhood. The array also comprises a circuit for suppressing those pulses that are compared negatively versus the corresponding pulses in another pixel of the neighborhood for the same one or more criteria. A corresponding method is also provided.

Abstract: A pixel for the detection of electromagnetic radiation or high energy particles or charge packets, in particular for detecting X-ray photons, comprises a radiation receptor for converting the radiation into a sensing signal, the pixel being adapted for performing both pulse detection and integration of the same sensing signal.

Abstract: A pixel for the detection of electromagnetic radiation or impinging high energy particles, in particular for detecting X-ray photons, including a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, a converter for converting the radiation signal into a pulse train, and an analog accumulator for accumulating the pulses of a pulse train to an analog signal for readout. The analog accumulator is adapted such that the analog signal is non-linearly proportional to the pulse count. Such non-linear analog accumulator has the advantage of an large dynamic range.