Patents Assigned to California Institute of Technology, a corporation
  • Electrically conducting ternary amorphous fully oxidized materials and their application
    Publication number: 20040197983
    Abstract: Electrically active devices are formed using a special conducting material of the form Tm-Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.
    Type: Application
    Filed: April 20, 2004
    Publication date: October 7, 2004
    Applicant: California Institute of Technology, a corporation
    Inventors: Pierre Giauque, Marc Nicolet, Stefan M. Gasser, Elzbieta A. Kolawa, Hilary Cherry
  • Hydro elastic pump which pumps using non-rotary bladeless and valveless operations
    Publication number: 20040151607
    Abstract: A pump formed from an asymmetric tube, which is pinched to form asymmetric forces, that pump fluid.
    Type: Application
    Filed: January 20, 2004
    Publication date: August 5, 2004
    Applicant: California Institute of Technology a corporation
    Inventor: Morteza Gharib
  • Micromachined parylene membrane valve and pump
    Publication number: 20010014438
    Abstract: A micromachined fluid handling device having improved properties. The valve is made of reinforced parylene. A heater heats a fluid to expand the fluid. The heater is formed on unsupported silicon nitride to reduce the power. The device can be used to form a valve or a pump. Another embodiment forms a composite silicone/parylene membrane. Another feature uses a valve seat that has concentric grooves for better sealing operation.
    Type: Application
    Filed: December 22, 2000
    Publication date: August 16, 2001
    Applicant: California Institute of Technology, a corporation
    Inventors: Yu-Chong Tai, Xing Yang, Charles Grosjean, Xuan-Qi Wang
  • Gas phase silicon etching with bromine trifluoride
    Publication number: 20010002663
    Abstract: An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.
    Type: Application
    Filed: December 19, 2000
    Publication date: June 7, 2001
    Applicant: California Institute of Technology, a corporation
    Inventors: Yu-Chong Tai, Xuan-Oi Wang