Abstract: A thin film solar module including at least one first sub module including a plurality of first thin film solar cells connected with one another in series; and a second sub module connected with the first sub module in parallel, the second sub module including a plurality of second thin film solar cells connected with one another in series. The sub modules are formed on a shared substrate in a monolithic manner, wherein a first connecting cell including the first thin film solar cells and a second connecting cell including the second thin film solar cells are arranged adjacent to one another, spaced apart from each other through an insulation trench and electrically connected with one another through a shared contact. The invention further relates to a method for producing a thin film solar module.

Abstract: The present invention relates to a photovoltaic module structure 1 and to a method for establishing an electrically conductive connection between two spaced contact layers 4?, 6?, in particular in the photovoltaic module structure 1 according to the invention. The production method is particularly simple and economical and the photovoltaic module structure 1 according to the invention enables a significant gain in efficiency.

Abstract: The invention relates to a process for producing a glass sheet 10, 21 coated with a semiconductor material, which comprises the steps (a) production of a glass strip in a float bath 3 containing liquid tin; (b) discharge of the glass strip from the float bath 3 and optionally coating of the glass strip with a transparent, electrically conductive intermediate layer; (c) transfer of the uncoated or coated glass strip into a deposition chamber 5 for the physical deposition of the semiconductor material from the gas phase; and (d) coating of the coated or uncoated glass strip from step (c) with the semiconductor material by physical deposition of the semiconductor material from the gas phase at a gas pressure of at least 0.1 bar. The invention additionally relates to an apparatus for producing a glass strip coated with a semiconductor material, a process for producing a solar cell or a solar module and also a solar cell or a solar module which can be obtained by this process.

Abstract: The invention relates to a process for producing a glass sheet 10, 21 coated with a semiconductor material, which comprises the steps (a) production of a glass strip in a float bath 3 containing liquid tin; (b) discharge of the glass strip from the float bath 3 and optionally coating of the glass strip with a transparent, electrically conductive intermediate layer; (c) transfer of the uncoated or coated glass strip into a deposition chamber 5 for the physical deposition of the semiconductor material from the gas phase; and (d) coating of the coated or uncoated glass strip from step (c) with the semiconductor material by physical deposition of the semiconductor material from the gas phase at a gas pressure of at least 0.1 bar. The invention additionally relates to an apparatus for producing a glass strip coated with a semiconductor material, a process for producing a solar cell or a solar module and also a solar cell or a solar module which can be obtained by this process.

Abstract: The present invention relates to gas evaporator devices (1) and methods for operating them. By virtue of the improvements according to the invention, the service life of conventional gas evaporator devices can be significantly improved, such that the maintenance and material outlay and hence the costs of the coating method are reduced. This is achieved by virtue of the fact that a shielding element (5) impermeable at least to passage of the material is provided at least between the mixture of gas and material flowing in the section (4), in which material to be evaporated is guided in a gas flow and is heated by the heating element (2), and the heating element (2).

Abstract: A process for coating a substrate at atmospheric pressure is disclosed, the process comprising the steps of vaporizing a mass of semiconductor material within a heated inert gas stream to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at the substrate, the substrate having a temperature below the condensation temperature of the semiconductor material thereby depositing a layer of the semiconductor material onto a surface of the substrate, extracting undeposited semiconductor material; and circulating the undeposited semiconductor material into the fluid mixture having a temperature above the condensation temperature.

Abstract: A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

Abstract: A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.