Abstract: An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers from the first charge carrier injecting layer; a second component for accepting negative charge carriers from the second charge carrier injecting layer; and a third, organic light-emissive component for generating light as a result of combination of charge carriers from the first and second components; at least one of the first, second and third components forming a type II semiconductor interface with another of the first, second and third components.

Abstract: Optical devices fabricated from solvent processible polymers suffer from susceptibility to solvents and morphological changes. A semiconductive polymer capable of luminescence in an optical device is provided. The polymer comprises a luminescent film-forming solvent processible polymer which contains cross-linking so as to increase its molar mass and to resist solvent dissolution, the cross-linking being such that the polymer retains semiconductive and luminescent properties.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A light-emissive device is prepared by depositing a polymer layer on a substrate. The deposition process utilizes a formulation comprising a conjugated polymer dissolved in a solvent, the solvent including a trialkyl-substituted aromatic hydrocarbon wherein at least two of the alkyl substituents are ortho to one another. The deposition of the polymer layer on the substrate may be accomplished by an ink-jet method.

Abstract: An organic light-emitting device comprising a light-emissive organic layer interposed between first and second electrodes for injecting charge carriers into the light-emissive organic layer, at least one of said first and second electrodes comprising a plurality of layers including a first electrode layer having a high resistance adjacent the surface of the light-emissive organic layer remote from the other of the first and second electrodes, said first electrode layer comprising a high-resistance material selected from the group consisting of a mixture of a semiconductor material with an insulator material, a mixture of a semiconductor material with a conductor material and a mixture of an insulator material with a conductor material.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A transparent or substantially transparent formable and/or flexible component for use as an outer protective element in an electronic or opto electronic device including at least one electrically active organic layer, which component is a composite structure comprising a layer of glass of a thickness less than or equal to 200 microns and a layer of plastic.

Abstract: Optical devices fabricated from solvent processible polymers suffer from susceptibility to solvents and morphological changes. A semiconductive polymer capable of luminescence in an optical device is provided. The polymer comprises a luminescent film-forming solvent processible polymer which contains cross-linking so as to increase its molar mass and to resist solvent dissolution, the cross-linking being such that the polymer retains semiconductive and luminescent properties.

Abstract: An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers from the first charge carrier injecting layer; a second component for accepting negative charge carriers from the second charge carrier injecting layer; and a third, organic light-emissive component for generating light as a result of combination of charge carriers from the first and second components; at least one of the first, second and third components forming a type II semiconductor interface with another of the first, second and third components.

Abstract: Optical devices fabricated from solvent processible polymers suffer from susceptibility to solvents and morphological changes. A semiconductive polymer capable of luminescence in an optical device is provided. The polymer comprises a luminescent film-forming solvent processible polymer which contains cross-linking so as to increase its molar mass and to resist solvent dissolution, the cross-linking being such that the polymer retains semiconductive and luminescent properties.

Abstract: An electroluminescent device comprising: a first charge carrier injecting layer for injecting positive charge carriers; a second charge carrier injecting layer for injecting negative charge carriers; and a light-emissive layer located between the charge carrier injecting layers and comprising a mixture of: a first component for accepting positive charge carriers from the first charge carrier injecting layer; a second component for accepting negative charge carriers from the second charge carrier injecting layer; and a third, organic light-emissive component for generating light as a result of combination of charge carriers from the first and second components; at least one of the first, second and third components forming a type II semiconductor interface with another of the first, second and third components.

Abstract: An organic light-emitting device, comprising: a substrate; a first conductive layer formed over the substrate; at least one layer of a light-emissive organic material formed over the first conductive layer; a barrier layer formed over the at least one organic layer which acts to protect the at least one layer of organic material; and a second conductive layer, preferably a patterned sputtered layer, formed over the barrier layer.

Abstract: An electroluminescent device comprising: an organic light-emissive layer; an electrode on one side of the light-emissive layer for injecting charge carriers of a first polarity towards the light-emissive layer; and a light filtering layer on the other side of the light-emissive layer, the light filtering layer comprising an organic material that is doped to render it at least partially electrically conductive for injection of charge carriers of a second type towards the light-emissive layer.

Abstract: Provided is a method of fabricating an organic light-emitting device; which method comprises the steps of: forming a first electrode (4) for the device over a substrate (2); either forming by self-assembly at least one polymer layer (6, 8) over the first electrode (4) and forming other than by self-assembly at least one layer of organic light emissive material (10) over the at least one polymer layer (6, 8); and forming a second electrode (12) for the device over the at least one layer of organic light emissive material (10); or forming other than by self-assembly at least one layer of organic light emissive material over the first electrode and forming by self-assembly at least one polymer layer over the at least one layer of organic light emissive material; and forming a second electrode for the device over the at least one polymer layer. Also provided is an organic light emitting device, obtainable according to the method of the present invention.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A light-emitting device comprising: a first electroluminescent element for emitting light of a first colour when energised; and a second electroluminescent element for emitting light of a second colour when energised, the first electroluminescent element having an active lifetime which is greater than that of the second electroluminescent element; characterised in that the second element is configured to operate at a lower brightness than the first element.

Abstract: An opto-electrical device comprising an anode electrode, a cathode electrode, and an opto-electrically active region located between the electrodes, the cathode electrode including a first layer comprising a compound of a group 1 metal, group 2 metal, or a transition metal, a second layer comprising a material having a work function below 3.5 eV, and a third layer spaced from the opto-electrically active region by the first and second layers and having a work function above 3.5 eV.

Abstract: A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output.

Abstract: An opto-electrical device comprising an anode electrode, a cathode electrode, and an opto-electrically active region located between the electrodes, the cathode electrode including a first layer comprising a material having a work function below 3.5 eV, a second layer of a different composition from the first layer, comprising another material having a work function below 3.5 eV, the second layer being further from the opto-electrically active region than the first layer, and a third layer comprising a material having a work function above 3.5 eV, the third layer being further from the opto-electrically active region than the first layer.