Abstract: A mass analysis device with wide angular acceptance, notably of the mass spectrometer or atom probe microscope type, includes means for receiving a sample, means for extracting ions from the surface of the sample, and a reflectron producing a torroidal electrostatic field whose equipotential lines are defined by a first curvature in a first direction and a first center of curvature, and a second curvature in a second direction perpendicular to the first direction and a second center of curvature, the sample being positioned close to the first center of curvature.

Abstract: An achromatic magnetic mass spectrometer, for example of the SIMS type with double focusing, comprises means for canceling the four aberrations of the second order, and means for canceling the off-axis achromatism and for modulating the dispersion in mass.

Abstract: A tomographic atom probe uses electrical pulses applied to an electrode in order to carry out evaporation of the sample being analyzed. In order to produce these electrical pulses, the tomographic atom probe comprises a high-voltage generator connected to an electrode by an electrical connection comprising a chip of semiconductor material. The probe also comprises a light source which can be controlled in order to generate light pulses which are applied to the semiconductor chip. Throughout the illumination, the chip is rendered conductive, which puts the high-voltage generator and the electrode in electrical contact so that a potential step is applied to the latter. The probe also comprises means for applying a voltage step of opposite amplitude to the previous step at the end of a time interval ?t0, so that the electrode finally receives a voltage pulse of duration ?t0.

Abstract: A wide spectral band laser pulse generating device capable of covering a spectrum formed of given wavelengths is provided, including: a monochromatic laser light source whose intensity is adjustable; non-linear optical means, a photonic crystal or a microstructured optical fiber for example, for carrying out spectral widening of the wave emitted by the light source; the light source and the non-linear optical means are configured and arranged so as to create a white supercontinuum whose continuous spectrum contains the wavelengths considered. The invention relates to the general field of the analysis of the composition of material specimens, and in particular to laser tomographic atom probes.

Abstract: An achromatic magnetic mass spectrometer, for example of the SIMS type with double focusing, comprises means for canceling the four aberrations of the second order, and means for canceling the off-axis achromatism and for modulating the dispersion in mass.

Abstract: A mass analysis device with wide angular acceptance, notably of the mass spectrometer or atom probe microscope type, includes means for receiving a sample, means for extracting ions from the surface of the sample, and a reflectron producing a torroidal electrostatic field whose equipotential lines are defined by a first curvature in a first direction and a first center of curvature, and a second curvature in a second direction perpendicular to the first direction and a second center of curvature, the sample being positioned close to the first center of curvature.

Abstract: The present invention concerns the enhancing of the mass resolution of wide angle tomographic atom probes. The invention consists of an atom probe also comprising a sample-holding device and a detector which are separated from one another by a distance L and enclosed in a chamber, an “Einzel” type electrostatic lens consisting of three electrodes arranged inside the chamber between the sample and the detector, to which electrical potentials are applied so as to form an electrical field that strongly focuses the beam of ions emitted by the sample under test when the probe is operating. According to the invention, the geometry of the electrodes is defined precisely so as to greatly limit the effects of the spherical aberration that affects the “Einzel” lens on the beam of ions, said spherical aberration being clearly sensitive when the lens is greatly polarized. The invention applies more particularly to the atom probes known as 3D atom probes.

Abstract: A tomographic atom probe uses electrical pulses applied to an electrode in order to carry out evaporation of the sample being analyzed. In order to produce these electrical pulses, the tomographic atom probe comprises a high-voltage generator connected to an electrode by an electrical connection comprising a chip of semiconductor material. The probe also comprises a light source which can be controlled in order to generate light pulses which are applied to the semiconductor chip. Throughout the illumination, the chip is rendered conductive, which puts the high-voltage generator and the electrode in electrical contact so that a potential step is applied to the latter. The probe also comprises means for applying a voltage step of opposite amplitude to the previous step at the end of a time interval ?t0, so that the electrode finally receives a voltage pulse of duration ?t0.

Abstract: A wide spectral band laser pulse generating device capable of covering a spectrum formed of given wavelengths is provided, including: a monochromatic laser light source whose intensity is adjustable; non-linear optical means, a photonic crystal or a microstructured optical fiber for example, for carrying out spectral widening of the wave emitted by the light source; the light source and the non-linear optical means are configured and arranged so as to create a white supercontinuum whose continuous spectrum contains the wavelengths considered. The invention relates to the general field of the analysis of the composition of material specimens, and in particular to laser tomographic atom probes.

Abstract: The present invention concerns the enhancing of the mass resolution of wide angle tomographic atom probes. The invention consists of an atom probe also comprising a sample-holding device and a detector which are separated from one another by a distance L and enclosed in a chamber, an “Einzel” type electrostatic lens consisting of three electrodes arranged inside the chamber between the sample and the detector, to which electrical potentials are applied so as to form an electrical field that strongly focuses the beam of ions emitted by the sample under test when the probe is operating. According to the invention, the geometry of the electrodes is defined precisely so as to greatly limit the effects of the spherical aberration that affects the “Einzel” lens on the beam of ions, said spherical aberration being clearly sensitive when the lens is greatly polarized. The invention applies more particularly to the atom probes known as 3D atom probes.

Abstract: The present invention relates to a device for measuring the X-ray emission produced by an object, or specimen, exposed to an electron beam. The device includes at least one subassembly or electron column, which is used to produce and control the electron beam, and a support for positioning the object measured. It also includes spectral analysis means for analyzing the X-rays emitted by the specimen to be analyzed and optical means for controlling the position of the specimen relative to the beam. The energy of the beam created and the intensity of the electron current obtained are used to meet the sensitivity, resolution and precision requirements demanded by semiconductor manufacturers. The invention applies especially to checking the fabrication of an integrated-circuit wafer.

Abstract: The present invention relates to a device for measuring the X-ray emission produced by an object, or specimen, exposed to an electron beam. The device includes at least one subassembly or electron column, which is used to produce and control the electron beam, and a support for positioning the object measured. It also includes spectral analysis means for analyzing the X-rays emitted by the specimen to be analyzed and optical means for controlling the position of the specimen relative to the beam. The energy of the beam created and the intensity of the electron current obtained are used to meet the sensitivity, resolution and precision requirements demanded by semiconductor manufacturers. The invention applies especially to checking the fabrication of an integrated-circuit wafer.

Abstract: Disclosed is a method for measuring the depth of the bottoms of craters under formation on a sample placed within an analysis chamber of a physico-chemical analyzer, by optical interferometry. The method consists in splitting an incident bi-frequency laser beam into two parallel paths, a measurement path and a reference path, focusing each of the two paths on the surface of the sample, respectively one in the crater and the other in the vicinity, along an incident direction inclined in relation to the surface of the sample, recombining the two beams reflected on the surface of the sample to form only one beam, and applying the recombined beam to an interferometric detector to measure the path difference between the two reflected beams. Application to ion analyzers.

Abstract: The disclosed mass spectrometer has, positioned between an input slit and an output slit, crossed by particles emitted by a sample, an optical coupling system placed between two respectively electrostatic and magnetic sectors. The optical coupling system comprises at least two lenses with slits oriented respectively along a first direction in which the path of the ions is incurvated by the electrostatic and magnetic sectors and along a direction perpendicular to the plane of the path. The position of the two lenses on the optical axis of the spectrometer is determined to obtain a compensation for the chromatic dispersions throughout the axis downline from the spectrometer, a stigmatic image of the input slit in the output plane of the spectrometer and a stigmatic image downline from the spectrometer.

Abstract: The lens is formed by the association of two electromagnetic lenses sharing one and the same magnetic circuit crossed by one and the same central channel. The first lens is a shielded lens and has an annular gap at one of its ends. This annular gap cuts the central channel along a direction the plane of which is perpendicular to the optical axis. The second lens is a single-pole lens surrounding the annular gap of the first lens. It has an annular gap demarcated by two lips, the walls of which have shapes generated by revolution around the optical axis. Induction coils enable the magnetic flux of the gaps to be made to vary.

Abstract: A time-of-flight method and apparatus of analysis comprising a first step of continuously scanning the surface of a solid sample to be analyzed with a primary particles beam to liberate secondary particles from the sample and to thereby ionize the secondary particles. A second step forms a secondary particles beam and makes it travel through a path which is long enough for secondary particles with different energy levels or different masses to have substantially different times of flight. Then, the secondary particles are discriminated by deflecting them at an angle which is variable periodically as a function of time, with the same period as that of the scanning by the primary particles beam, but with a fixed phase shift such that the secondary particles have a given time of flight and are deflected in a pre-determined direction, irrespective of the point on the sample from which these secondary particles have been liberated.

Abstract: Disclosed are a method for the analysis of a sample by sputtering, using a particle beam, and a device to implement this method. The method consists in:scanning the sample on a surface called a scanning surface, to hollow out a crater with a flat bed, said flat bed constituting a surface called a surface of analysis;ionizing the particles liberated from the surface of analysis, by means of a pulsed laser beamidentifying the nature of the liberated and ionized particles by means of a mass spectrometer. The idle time available between two pulses of the laser beam is used to sputter the flanks of the crater, for these flanks also have to be sputtered although they do not form part of the surface of analysis proper. Thus the time needed to sputter the sample up to a certain depth is reduced to the minimum without loss of information.

Abstract: An electric beam integrated circuit tester including a source of primary electrons, a support for the integrated circuit, and an electronic column fixed above the support for the integrated circuit for focusing the primary electron beam emitted at the surface of the circuit on the points of the circuit to be tested. It also includes an accelerator of the secondary electrons emitted by the integrated circuit in a direction colinear and opposite that of the primary electron beam, a separator with three pole pieces for directing out of the column the beam of secondary electrons accelerated by the accelerator and an energy spectrometer coupled to the separator and fixed to the outside of the column for analyzing, depending on their energy, the electrons of the beam of secondary electrons emitted separately by the separator.

Abstract: To compensate for the charges created during the bombardment of a sample of insulating material, positively polarized by a beam of positive, primary ions, the method uses the secondary electrons emitted by the acceleration electrode under the impact of particles, emitted by the sample, which have not passed through the hole provided in this electrode for analysis. For this, an additional electrode, having a hole of a diameter greater than that of the acceleration electrode and carried to a potential which is greater than that of the same electrode by about 100 volts, is placed between the sample and this electrode, near the latter, to focus the secondary electrons on the imaged field of the sample.

Abstract: The invention provides a process and device for the ionic analysis of an insulating sample brought to a given negative potential, of the type in which a target on the surface of the sample to be analyzed is bombarded by means of a primary electron beam and negative ions emitted by the bombarded target are used for producing an ion image of the sample. An electron beam whose normal speed component cancels out just at level of the surface of the target is directed perpendicularly to the target.The device comprises for this purpose a filament, brought substantially to the same negative potential as the sample, which emits the electron beam. The electron beam, after emission, is deflected by a magnetic prism so as to be brought into coincidence with the optical axis of the negative ion beam emitted by the target.