Patents Assigned to Canaon Anelva Corporation
  • Method of production of a magnetoresistance effect device
    Patent number: 8394649
    Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
    Type: Grant
    Filed: January 3, 2008
    Date of Patent: March 12, 2013
    Assignees: Canaon Anelva Corporation, National Institute of Advanced Industrial Science and Technology
    Inventors: David D. Djayaprawira, Koji Tsunekawa, Motonobu Nagai, Hiroki Maehara, Shinji Yamagata, Naoki Watanabe, Shinji Yuasa