Abstract: A screwing part 1220 is inserted into a large through-hole 1110 from its front side and is screwed together with a male screw part of a jig. A convex part 1230 in an approximately ring shape is formed at a back end part of the screwing part 1220. The convex part 1230 is adjacent to a fitting part 1111 which is made of an approximately ring convex part projecting toward inside of the large through-hole 1110. The back of the fitting part 1111 is adjacent to a front end opening part 1310 of a back tubular part 1300. In short, the fitting part 1111 of the adaptor main body 1110 is sandwiched between the convex part 1230 and the front end opening part 1310. By inserting and pressing the back end opening part 1210 of the front tubular part 1200 into the front end opening part 1310 of the back tubular part 1300, the front tubular part 1200 and the back tubular part 1300 are connected and fixed with each other. Sign ? represents their pressing part.

Abstract: A ferrule holder 110 and a coil spring 120 are comprised in a main body 130 formed in an approximately tube shape. A cable adaptor 140 comprising a front opening part 142 at a large diameter part 141 is inserted from a back opening part 133 into the main body 130 having slits S2 and S3. A first small diameter part 131 of the main body 130 fits with the large diameter part 141 of the cable adaptor 140 and prevents the cable adaptor 140 from translating in the z-axis direction. And the second small diameter part 132 of the main body 130 controls transfer of the ferrule holder 110 in the z-axis direction. At the forward part of the large diameter 141, a taper part which helps to insert the cable adaptor 140 is formed around the circuit of the optical axis. Each slit formed at the back opening part 133 also helps to insert the cable adaptor 140.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an even number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: A semiconductor device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and middle layers (carrier accumulation layers) C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers conducted in the i-layer in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Then quantum-wave interference layers and carrier accumulation layers are formed in series.

Abstract: An emission layer is formed in a p-layer, and an electron reflecting layer and a hole reflecting layer are formed sandwiching the emission layer. Each of the electron reflecting layer and the hole reflecting layer is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. Thicknesses of the first and the second layers in the electron reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of electrons in each of the first and the second layers, and each thicknesses of the first and the second layers in the hole reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of holes in each of the first and the second layers. A luminous efficiency of the LED is improved by electron-hole pairs.

Abstract: A field effect transistor having a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W, and the quantum-wave interference layer is formed in a region adjacent to a channel. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B, which exist around the lowest energy level of the second layer B. The quantum-wave interference layer functions as a carrier reflecting layer, and enable to prevent leakage current from a source to a region except a drain.

Abstract: A semiconductor device is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.

Abstract: A light-emitting device comprising an emission layer which has a single layer structure is formed. The emission layer is sandwiched by a first quantum-wave interference layer constituted by plural periods of a pair of a first layer and a second layer, the second layer having a wider band gap than the first layer, and a second quantum-wave interference layer constituted by plural periods of a pair of a third layer and a fourth layer, the fourth layer having a wider band gap than the third layer. The first quantum-wave interference layer functions as an electron reflection layer, and its thickness is determined by multiplying by an odd number one fourth of quantum-wave wavelength of the injected electrons. The second quantum-wave interference layer functions as an electron transmission layer, and its thickness is determined by multiplying by an odd number one fourth of quantum-wave wavelength of the injected electrons. As a result, luminous efficiency of the device is improved.

Abstract: A light-emitting diode comprising a quantum-wave reflection layer for electrons, a quantum-wave transmission layer for electrons, and an emission layer formed between the quantum-wave reflection layer and th e quantum-wave transmission layer is used as a photocoupler. Compared with a commercial product having a response velocity of 20 MHz, a response velocity of the light-emitting diode of the present invention is improved to be 100 MHz to 200 MHz. The quantum-wave reflection layer for electrons and the quantum-wave transmission layer for electrons are formed to have thicknesses of one fourth and a half of quantum wave of electrons, respectively.

Abstract: A transistor having an electron quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B in a p-layer of a pn junction structure. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B, the carriers existing around the lowest energy level of the second layer B. The quantum-wave interference layer functions as an electron reflecting layer, and enables to lower a dynamic resistance of the transistor notably. An amplification factor of a bipolar transistor of an npn junction structure, having the electron reflecting layer is improved compared with a transistor without an electrode reflecting layer. Similarly, a transistor having a hole reflecting layer, which has a larger amplification factor, can be obtained.

Abstract: A variable capacity device having an nin, pip, nn−p, np−p, or nip junction whose middle layer is constituted by a quantum-wave interference layer with plural periods of a first layer W and a second layer B as a unit. The second layer B has a wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of a wavelength of a quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for changing energy band suddenly, is formed at interfaces between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Plurality of quantum-wave interference units are formed sandwiching carrier accumulation layers in series. Then a voltage-variation rate of capacity of the variable capacity device is improved.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: A diode is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B, having at least one quantum-wave interference layer in a p-layer or an n-layer. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for sharply varying an energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.

Abstract: A pin diode, having a p-layer, an n-layer, and an i-layer sandwiched by the p-layer and the n-layer, is constituted by a quantum-wave interference unit with a plurality of pairs of a first layer W and a second layer B. The second layer B has a wider band gap than the first layer W. Each thickness of the first layer W and the second layer b is determined by multiplying by odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B. A &dgr; layer sharply varying in band gap energy from the first and second layers is formed at every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. A plurality of quantum-wave interference units are formed sandwiching carrier accumulation layers in series. Then, the I-V characteristic of the diode indicates that, for values of an applied backward voltage, a backward electric current can flow rapidly.

Abstract: A semiconductor device is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.

Abstract: A cable stripper for removing covers or jackets of, for instance, a coaxial cable including circular blades rotatably installed on action levers which are pivoted together with an operating lever that is pivotally mounted to a stripper main body, and a lower blade linked to a lower cutter lever provided in the stripper main body. The circular blades bite into the cover of a cable inserted into the stripper main body when the operating lever is pivoted toward the stripper main body, thus making circumferential cuts of different depths in the cover by rotating the stripper main body about the axis of the cable; and in addition, when the lower cutter lever is pressed, the lower blade bites into the covering so that a straight cut in the axial direction of the cable is also made in the covering.