Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract: A processing apparatus for processing a substrate in a vacuum processing space in a chamber includes a shield arranged in the chamber, and a holding portion configured to hold the shield by a magnetic force. The holding portion has a holding surface on which a first magnet is arranged. The shield includes a second magnet configured to generate an attraction force with respect to the first magnet, and a receiving portion configured to receive a tool configured to move the shield with respect to the holding portion.

Abstract: A diaphragm-type pressure gauge which is attached to a vessel to be measured and measures a pressure by introducing a gas inside the vessel includes a housing into which the gas is introduced, and a sensor unit which is arranged in the housing, and includes a diaphragm electrode, a measurement surface of which is arranged parallel to an introduction direction of the gas. When the housing is attached to the vessel, the measurement surface of the diaphragm electrode is arranged parallel to a direction of gravitational force.

Abstract: An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Abstract: A sputtering apparatus includes a backing plate, a fixing portion, and a shield surrounding the periphery of a target and having an opening. The fixing portion fixes the target to the backing plate by pressing the peripheral portion of the target against the backing plate. The shield includes a facing portion facing the backing plate without the fixing portion intervening between them, and an outer portion formed outside the facing portion. The gap between the facing portion and the backing plate is smaller than the gap between the outer portion and the backing plate. The inner surface of the shield, which faces a processing space, includes a portion which inclines such that the distance between the inner surface and the backing plate decreases from the outer portion to the facing portion.

Abstract: The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferromagnetic layer; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of: forming a metal layer on the first ferromagnetic layer; oxidizing the metal layer; and, before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature.

Abstract: This invention provides a deposition apparatus which forms a film on a substrate, comprising: a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.

Abstract: An objective of the present invention is to provide a sputtering apparatus capable of obtaining an adequate film thickness distribution on a substrate surface even if a target projection plane is kept from being projected on the substrate. A sputtering apparatus includes: a process chamber; a substrate holder being rotatable in an in-plane direction of the substrate while holding the substrate; and a sputtering cathode located obliquely to the substrate holder, and arranged to incline to the substrate holder. A projection plane of a target holding surface of the sputtering cathode projected in a direction along a center normal line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed outside the substrate mounting surface of the substrate holder, and the center normal line to the substrate mounting surface and the center normal line to the sputtering cathode are not coplanar.

Abstract: It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.

Abstract: The present invention provides a temperature control method for a substrate heat treatment apparatus that achieves high throughput while securing stability in rapid heating where a large-diameter silicon carbide (SiC) substrate having impurity ions implanted thereinto is subjected to an activation annealing treatment. A temperature control method for a substrate heat treatment apparatus (1) that includes a heating element includes: increasing the treatment temperature; continuing the temperature increase by reducing the value of power in a stepwise manner after the treatment temperature reaches a preset temperature (T1) before reaching the annealing temperature, the power being applied to heat the heating element; and maintaining the treatment temperature at a fixed value until an annealing treatment is completed after the treatment temperature reaches the annealing temperature (TA).

Abstract: The invention reduces generation of particles. An embodiment of the preset invention includes a target holder (6) for holding a target (4), a power source (12) for applying a power to the target holder (6), a substrate holder (7), a first shutter (14) capable of opening and closing between the target (4) and the substrate holder (7), a second shutter (19) located closer to the substrate holder (7) than to the first shutter (14), and capable of opening and closing between the target holder (6) and the substrate holder (7), and a controller (con) for controlling the power source (12) and the first and second shutters (14), (19). The controller (con) applies a first power to the target holder (6) in the state where the first shutter (14) is closed, then opens the first shutter (14), and further applies a second power higher than the first power to the target holder (6) in the state where the second shutter (19) is closed.

Abstract: This invention provides a cold trap using a Stirling refrigerator. A refrigerator includes a drive piston configured to drive a free piston so as to reciprocally move a working medium between a heat dissipation portion and a heat absorption portion, a vibration sensor configured to measure a vibration of a case, a dynamic vibration absorber configured to reduce the vibration of the case when the drive piston is driven, and a frequency adjustment device configured to adjust a driving frequency to reduce the vibration of the case when the drive piston is driven in a state in which the case is connected to a vacuum device.

Abstract: A processing apparatus includes a supply source including a first supply source and a second supply source arranged to respectively face a first surface of a substrate and a second surface on an opposite side of the first surface. The supply source is configured to supply a material to apply a process to the substrate. A shield member includes a first shield provided around the first supply source and a second shield provided around the second supply source, the first shield and the second shield being arranged to sandwich the substrate. A moving device is configured to move the first shield and the second shield to set one of a close state in which the first shield and the second shield are close to each other and a separate state in which the first shield and the second shield are separate from each other.

Abstract: The invention provides: an ion beam generator and an ion beam plasma processing apparatus including a movable member (for example, a plug) which is capable of reducing formation of an adhering film on a sidewall of the member even when an electrode included in a grid assembly is sputtered. The ion beam generator of an aspect of the invention includes: a grid assembly provided opposed to an upper wall; a plug movable in a first direction from the upper wall toward the grid assembly and in a second direction from the grid assembly toward the upper wall; and a shield configured to shield a sidewall of the plug.

Abstract: A processing apparatus includes a substrate holding portion, a shield arranged to surround a substrate, and a shield holding portion configured to hold the shield. The shield includes first magnets each having a magnetic pole of a first polarity facing the shield holding portion, and second magnets each having a magnetic pole of a second polarity facing the shield holding portion. The first magnets and the second magnets are arranged at positions symmetrical with respect to the center of the shield. The shield holding portion includes third magnets each having a magnetic pole of the first polarity facing the shield, and fourth magnets each having a magnetic pole of the second polarity facing the shield.

Abstract: A vacuum process method for a magnetic recording medium having a surface protective layer for protecting a magnetic recording layer formed on a substrate includes a ta-C film forming step of forming a ta-C film on the magnetic recording layer, a transportation step of transporting a substrate on which the ta-C film is formed, a radical generation step of generating radicals by exciting a process gas, and a radical process step of irradiating a surface of the ta-C film with the radicals.

Abstract: The present invention provides a nonvolatile memory element, in a nonvolatile memory element having a variable resistance layer possessing a stacked structure, in which the variable resistance layer has a high resistance change ratio, and a method of manufacturing the same. The nonvolatile memory element according to one embodiment of the present invention includes a first electrode, a second electrode, and a variable resistance layer which is interposed between the first electrode and second electrode and in which the resistance value changes into at least two different resistance states. The variable resistance layer possesses a stacked structure having a first metal oxide layer containing Hf and O, and a second metal oxide layer that is provided between the first metal oxide layer and at least one of the first electrode and the second electrode and contains Al and O.

Abstract: A pressure gauge includes a first sensor for detecting a pressure in a first range, a second sensor for detecting a pressure in a second range, and a processing unit for determining a pressure value based on outputs from the first sensor and the second sensor. The first and the second ranges have an overlapping range, an upper limit of the second range is higher than that of the first range, the processing unit determines a correction value based on outputs from the first sensor and the second sensor when a pressure falls within the overlapping range, and the processing unit determines a pressure value based on an output from the second sensor and the correction value, when measuring, by using the second sensor, a pressure in the second range, higher than that of the first pressure range.

Abstract: A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed.