Patents Assigned to Canon Kabushiki Kaisha & Tadahiro Ohmi
  • Device and method of manufacturing the same and semiconductor device and method of manufacturing the same
    Patent number: 5541444
    Abstract: A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.
    Type: Grant
    Filed: September 12, 1994
    Date of Patent: July 30, 1996
    Assignee: Canon Kabushiki Kaisha & Tadahiro Ohmi
    Inventors: Tadahiro Ohmi, Mamoru Miyawaki