Abstract: Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid (19) that oxidizes and dissolves a target substrate (20) to be treated is supplied to the surface of said substrate (20) to be treated; a positioning step in which a mesh-like transferring member (10b) provided with a catalyst material is positioned near or in contact with the surface of the substrate (20) to be treated; and a concave or convex forming step in which a concave or convex is formed on the surface of the substrate (20) to be treated via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e.