Abstract: There is provided a film-forming surface reforming method that comprises the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, amine, amino compound or their derivative into contact with a film-forming surface before an insulating film is formed on the film-forming surface of a substrate, and
Type:
Application
Filed:
March 15, 2001
Publication date:
October 11, 2001
Applicant:
CANON SALES CO., and SEMICONDUCTOR PROCESS LABORATORY CO., LTD.